BLF248,112 NXP Semiconductors, BLF248,112 Datasheet - Page 5
![TRANSISTOR RF DMOS SOT262A1](/photos/5/63/56382/568-sot-262a_sml.jpg)
BLF248,112
Manufacturer Part Number
BLF248,112
Description
TRANSISTOR RF DMOS SOT262A1
Manufacturer
NXP Semiconductors
Datasheet
1.BLF248112.pdf
(16 pages)
Specifications of BLF248,112
Package / Case
SOT-262A1
Transistor Type
2 N-Channel (Dual)
Frequency
225MHz
Gain
11.5dB
Voltage - Rated
65V
Current Rating
25A
Voltage - Test
28V
Power - Output
300W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.15 Ohms
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2389
934006630112
BLF248
BLF248
934006630112
BLF248
BLF248
Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
(mV/K)
V
Fig.4
I
Fig.6
D
T.C.
R DSon
DS
(m )
= 8 A; V
= 10 V.
200
100
0
1
2
3
4
5
10
0
1
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
0
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
GS
= 10 V.
50
1
100
I D (A)
T j ( C)
MGP204
MGP206
10
150
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
1500
1000
(A)
C
500
I D
= 10 V; T
= 0; f = 1 MHz.
60
40
20
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
j
= 25 C.
10
5
10
20
C os
C is
Product specification
15
30
V GS (V)
V DS (V)
BLF248
MGP205
MGP207
20
40