BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 10

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
BLF878_2
Product data sheet
7.3 Ruggedness in class-AB operation
7.4 Impedance information
The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: V
power.
Table 8.
Simulated Z
f
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
Fig 12. Definition of transistor impedance
Typical push-pull impedance
i
and Z
L
device impedance; impedance info at V
Rev. 02 — 15 June 2009
Z
0.933
0.959
0.988
1.020
1.057 + j0.017
1.097 + j0.314
1.143 + j0.598
1.194 + j0.871
1.251 + j1.137
1.315 + j1.397
1.388 + j1.652
1.470 + j1.903
1.563 + j2.152
1.668 + j2.398
1.788 + j2.642
1.925 + j2.885
2.082 + j3.125
2.262 + j3.362
2.470 + j3.594
2.711 + j3.816
2.989 + j4.025
3.310 + j4.213
3.680 + j4.369
4.103 + j4.478
4.580 + j4.519
i
Z
i
j1.376
j0.986
j0.628
j0.295
gate
001aai086
drain
Z
DS
L
DS
= 42 V; f = 860 MHz at rated
= 42 V and P
UHF power LDMOS transistor
Z
6.431
6.889
7.237
7.475
7.610
7.652
7.614
7.512
7.359
7.168
6.949
6.712
6.465
6.214
5.962
5.714
5.472
5.238
5.012
4.796
4.590
4.394
4.208
4.031
3.864
L
j4.296
j3.911
j3.476
j3.017
j2.559
j2.120
j1.713
j1.348
j1.031
j0.762
j0.542
j0.368
j0.237
j0.145
j0.089
j0.064
j0.066
j0.093
j0.141
j0.207
j0.289
j0.385
j0.493
j0.611
j0.737
L(PEP)
© NXP B.V. 2009. All rights reserved.
BLF878
= 300 W.
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