BLL1214-250,112 NXP Semiconductors, BLL1214-250,112 Datasheet - Page 2

• Manufacturer Part Number: BLL1214-250,112
• Description: TRANSISTOR RF LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLL1214-250,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 12dB
• Voltage - Rated: 75V
• Current Rating: 45A
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 250W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.06 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 200 C
• Application: L-Band
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W
• Power Gain (typ)@vds: 12(Min)@36VdB
• Frequency (min): 1.2GHz
• Frequency (max): 1.4GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 42(Min)%
• Mounting: Screw
• Mode Of Operation: Pulsed RF Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 400000mW
• Vswr (max): 3
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2424; 934056925112; BLL1214-250; BLL1214-250

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT502A) with a ceramic cap. The common source is
connected to the flange.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2003 Aug 29
Pulsed class-AB;
t
V
V
P
T
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
p
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
L-band radar applications in the 1200 to 1400 MHz
frequency range.
DS
GS
tot
L-band radar LDMOS transistor
= 1 ms;
OPERATION
MODE OF
= 10%
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
h
= 25 C in a common source test circuit.
1200 to 1400
PARAMETER
(MHz)
f
V
(V)
36
DS
(mA)
T
150
I
DQ
h
CAUTION
70 C; t
2
CONDITIONS
PINNING - SOT502A
handbook, halfpage
(W)
250
P
L
p
= 1 ms; = 10%
PIN
1
2
3
(dB)
>12
G
p
Fig.1 Simplified outline.
Top view
drain
gate
source, connected to flange
>42
(%)
D
65
MIN.
1
2
droop
pulse
DESCRIPTION
(dB)
<0.6
BLL1214-250
Product specification
75
400
150
200
MBK394
22
MAX.
3
<100
(ns)
t
r
V
V
W
C
C
UNIT
<100
(ns)
t
f