PD57006-E STMicroelectronics, PD57006-E Datasheet - Page 10

• Manufacturer Part Number: PD57006-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57006-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 165 C
• Forward Transconductance Gfs (max / Min): 0.58 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 65V
• Threshold Voltage Vgs Typ: 5V
• Transistor Case Style: PowerSO-10RF
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6719-5; PD57006-E

Typical performance
10/22
Figure 17. Power gain vs output power
Figure 19. Output power vs bias current
18
16
14
12
10
8
6
4
10
8
6
4
2
0
0
0
1
V dd=28V
Idq=70m A
2
960 M H z
100
925 M H z
IDQ, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
3
945 M H z
4
200
945 M H z
5
960 M H z
6
V dd=28V
P in = 22.7 dB m
925 M H z
300
7
Doc ID 12611 Rev 3
8
400
9
Figure 18. Drain efficiency vs output power
Figure 20. Drain efficiency vs bias current
60
50
40
30
20
10
60
50
40
30
20
10
0
0
1
100
2
925 M H z
IDQ, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
3
960 M H z
945 M H z
4
200
960 M H z
5
945 M H z
6
Vdd=28V
Pin = 22.7 dBm
300
925 M Hz
V dd=28V
Idq=70m A
7
PD57006-E
8
400
9