PD57006-E STMicroelectronics, PD57006-E Datasheet - Page 3

IC TRANS RF PWR LDMOST PWRSO-10

PD57006-E

Manufacturer Part Number
PD57006-E
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57006-E

Transistor Type
LDMOS
Frequency
945MHz
Gain
15dB
Voltage - Rated
65V
Current Rating
1A
Current - Test
70mA
Voltage - Test
28V
Power - Output
6W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 165 C
Forward Transconductance Gfs (max / Min)
0.58 S
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Continuous Drain Current Id
1A
Drain Source Voltage Vds
65V
Threshold Voltage Vgs Typ
5V
Transistor Case Style
PowerSO-10RF
No. Of Pins
3
Svhc
No SVHC (15-Dec-2010)
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-6719-5
PD57006-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57006-E
Manufacturer:
ST
Quantity:
20 000
PD57006-E
1
1.1
1.2
Electrical data
Maximum ratings
Table 2.
Thermal data
Table 3.
V
Symbol
Symbol
(BR)DSS
P
R
T
V
DISS
T
STG
thJC
I
GS
D
J
Absolute maximum ratings (T
Thermal data
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ T
Max. operating junction temperature
Storage temperature
Junction - case thermal resistance
Doc ID 12611 Rev 3
Parameter
Parameter
C
= 70°C)
CASE
= 25°C)
-65 to +150
Value
Value
± 20
165
65
20
1
5
Electrical data
°C/W
Unit
Unit
°C
°C
W
V
V
A
3/22

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