PD55025S-E STMicroelectronics, PD55025S-E Datasheet - Page 6

• Manufacturer Part Number: PD55025S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD55025S-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 14.5dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 200mA
• Voltage - Test: 12.5V
• Power - Output: 25W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 7A
• Power Dissipation Pd: 79W
• Operating Temperature Range: -65°C To +165°C
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 25W(Min)
• Power Gain (typ)@vds: 14dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 86@12.5VpF
• Output Capacitance (typ)@vds: 60@12.5VpF
• Reverse Capacitance (typ): 6.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5302-5

Typical performance
4
6/25
Figure 3.
Figure 5.
C (pF)
1000
100
10
1.04
1.02
0.98
0.96
1
0
1
-25
f= 1 M H z
Typical performance
Capacitance vs. drain voltage
Gate-source voltage vs. case
temperature
V
DS
5
= 10 V
0
Tc, CASE TEMPERATURE (°C)
10
VDS (V)
15
25
20
50
I
D
= .25 A
I
D
I
D
= 1A
= 3A
25
I
I
D
D
= 2A
= 1.5 A
Doc ID 12596 Rev 2
C rs s
C is s
C o s s
75
30
Figure 4.
3.5
2.5
1.5
0.5
4
3
2
0
1
2.5
Drain current vs. gate voltage
3
Vgs, GATE-SOURCE VOLTAGE (V)
3.5
PD55015-E, PD55015S-E
4
4.5
V
DS
= 10 V
5