ATF-34143-TR1G Avago Technologies US Inc., ATF-34143-TR1G Datasheet - Page 5

• Manufacturer Part Number: ATF-34143-TR1G
• Description: IC PHEMT 1.9GHZ 60MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-34143-TR1G

• Gain: 17.5dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5.5V
• Current Rating: 145mA
• Noise Figure: 0.5dB
• Current - Test: 60mA
• Voltage - Test: 4V
• Power - Output: 20dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 5.5V
• Power Dissipation Pd: 725mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SOT-343
• No. Of Pins: 4
• Frequency Max: 6GHz
• Frequency Min: 450MHz
• Drain Current Idss Max: 145mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1571-2

ATF-34143 Typical Performance Curves, continued
Note:
1. P
5
Figure 14. Fmin and G
at V
Figure 17. NF, Gain, OP1dB and OIP3 vs. I
5.8 GHz Tuned for Noise Figure.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P
current source as is typically done with active biasing. As an example, at a V
is approached.
1dB
25
20
15
10
30
27
24
21
18
15
12
DS
9
6
3
0
0
0
= 4 V, I
measurements are performed with passive biasing. Quicescent drain current, I
DS
20
= 60 mA.
2000
40
FREQUENCY (GHz)
a
vs. Frequency and Temperature
I
DSQ
-40 C
85 C
25 C
4000
60
(mA)
[1]
80
6000
1dB
DS
100
Gain
OP1dB
OIP3
NF
at 4 V and
. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
8000
120
1.5
1.0
0.5
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Figure 18. P
mA at 2 GHz.
Figure 15. P
= 4 V, I
25
20
15
10
33
31
29
27
25
23
21
19
17
-5
5
0
0
0
DS
= 60 mA.
1dB
1dB
2000
, IP3 vs. Frequency and Temperature at V
vs. I
[1]
DS
P
50
OIP3
1dB
FREQUENCY (MHz)
Active Bias Tuned for NF @ 4V, 60
I
DS
DS
4000
(mA)
= 4 V and I
100
DSQ
6000
, is set with zero RF drive applied. As P
DSQ
3 V
4 V
= 10 mA, I
-40 C
85 C
25 C
8000
150
DS
d
increases to 62 mA as a P
Figure 16. NF, Gain, OP1dB and OIP3 vs. I
3.9 GHz Tuned for Noise Figure.
Figure 19. P
4V, 60 mA at 900 MHz.
DSQ
25
20
15
10
35
30
25
20
15
10
-5
5
0
5
0
the device is running closer to class
0
0
20
1dB
vs. I
40
50
DS
Active Bias Tuned for min NF @
I
60
I
DSQ
DS
1dB
(mA)
(mA)
1dB
is approached,
80
[1]
of +19 dBm
100
100
DS
Gain
OP1dB
OIP3
NF
120
3 V
4 V
at 4 V and
150
140
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0