ATF-58143-BLKG Avago Technologies US Inc., ATF-58143-BLKG Datasheet - Page 3

• Manufacturer Part Number: ATF-58143-BLKG
• Description: IC PHEMT 2GHZ 3V 30MA SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-58143-BLKG

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 16.5dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 30mA
• Voltage - Test: 3V
• Power - Output: 19dBm
• Configuration: Single Dual Source
• Power Dissipation: 500 mW
• Drain Source Voltage Vds: 5 V
• Gate-source Breakdown Voltage: - 5 V to 1 V
• Continuous Drain Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 5 V to 1 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Gate-source Voltage (max): 1V
• Pin Count: 3 +Tab
• Drain-gate Voltage (max): -5 to 1V
• Drain-source Volt (max): 5V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOT-343
• Continuous Drain Current Id: 500mA
• Power Dissipation Pd: 500mW
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SC-70
• No. Of Pins: 4
• Drain Current Idss Max: 30mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1870; ATF-58143-BLKG

ATF-58143 Electrical Specifications
T
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
RFin
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.
3
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
A
= 25°C, RF parameters measured in a test circuit for a typical device
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1dB Compressed
Output Power
0.6 dB loss
rd
Order
[1]
matching
[1]
[1]
input
[1]
28.2 + j9.4
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
Vgd = Vgs = ‑3V
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V,
51 – j3.3
matching
output
0.7 dB loss
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
RFout
Min.
0.4
0.18
—
230
—
—
—
—
—
15
—
—
—
29
—
—
—
—
—
—
—
Typ.
0.51
0.38
1
410
—
0.5
0.3
0.5
0.3
16.5
23.1
17.7
22.5
30.5
28.6
31.5
31.0
19
18
21
19
[2]
Max.
0.75
0.52
5
560
200
0.9
—
—
—
18.5
—
—
—
—
—
—
—
—
—
—
—