NE5520379A-A CEL, NE5520379A-A Datasheet - Page 7

• Manufacturer Part Number: NE5520379A-A
• Description: MOSFET LD N-CHAN 3.2V 79A
• Manufacturer: CEL

Specifications of NE5520379A-A

• Transistor Type: LDMOS
• Frequency: 915MHz
• Gain: 16dB
• Voltage - Rated: 15V
• Current Rating: 1.5A
• Voltage - Test: 3.2V
• Power - Output: 35.5dBm
• Package / Case: 79A
• Continuous Drain Current: 1.5 A
• Drain-source Breakdown Voltage: 15 V
• Forward Transconductance Gfs (max / Min): 2.5 S
• Gate-source Breakdown Voltage: 5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 20 W
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

35
30
25
20
15
10
35
30
25
20
15
10
33
31
29
27
25
23
0.0
5
5
OUTPUT POWER, DRAIN CURRENT
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER (1 785 MHz)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER (915 MHz)
vs. GATE TO SOURCE VOLTAGE
V
I
f = 915 MHz
V
I
f = 1 785 MHz
Dset
Dset
V
f = 1 785 MHz
P
DS
DS
DS
in
= 3.2 V
= 600 mA
= 25 dBm
= 2.8 V
= 600 mA
= 3.2 V
10
10
Gate to Source Voltage V
1.0
Input Power P
Input Power P
15
15
P
I
P
out
D
I
out
D
2.0
20
20
P
I
in
in
out
D
(dBm)
(dBm)
25
25
3.0
GS
(V)
30
30
Data Sheet PU10122EJ03V0DS
4.0
35
35
2 500
2 000
1 500
1 000
500
0
2 500
2 000
1 500
1 000
500
0
2 500
2 000
1 500
1 000
500
0
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
100
100
50
50
50
0
0
0
EFFICIENCY vs. INPUT POWER
EFFICIENCY vs. INPUT POWER
DRAIN EFFICIENCY, POWER ADDED
5
DRAIN EFFICIENCY, POWER ADDED
5
V
I
f = 915 MHz
V
I
f = 1 785 MHz
Dset
Dset
V
f = 1 785 MHz
P
DS
DS
DS
in
= 3.2 V
= 600 mA
= 2.8 V
= 600 mA
= 25 dBm
= 3.2 V
10
10
Gate to Source Voltage V
1.0
Input Power P
Input Power P
15
15
η
η
add
d
2.0
20
20
η
η
in
add
in
d
(dBm)
(dBm)
25
25
η
η
add
3.0
GS
NE5520379A
d
(V)
30
30
4.0
35
35
5