NE5520379A-A CEL, NE5520379A-A Datasheet - Page 9

• Manufacturer Part Number: NE5520379A-A
• Description: MOSFET LD N-CHAN 3.2V 79A
• Manufacturer: CEL

Specifications of NE5520379A-A

• Transistor Type: LDMOS
• Frequency: 915MHz
• Gain: 16dB
• Voltage - Rated: 15V
• Current Rating: 1.5A
• Voltage - Test: 3.2V
• Power - Output: 35.5dBm
• Package / Case: 79A
• Continuous Drain Current: 1.5 A
• Drain-source Breakdown Voltage: 15 V
• Forward Transconductance Gfs (max / Min): 2.5 S
• Gate-source Breakdown Voltage: 5 V
• Mounting Style: SMD/SMT
• Power Dissipation: 20 W
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

S-PARAMETERS
LARGE SIGNAL IMPEDANCE (V
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Note Z
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
f (MHz)
1 785
OL
is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
Z
TBD
in
(Ω)
Z
DS
OL
TBD
(Ω)
= 3.2 V, I
Note
Data Sheet PU10122EJ03V0DS
Dset
= 600 mA, P
in
= 25 dBm)
NE5520379A
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