BLF571,112 NXP Semiconductors, BLF571,112 Datasheet - Page 3

TRANSISTOR RF LDMOS SOT467C

BLF571,112

Manufacturer Part Number
BLF571,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF571,112

Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
225MHz
Gain
27.5dB
Voltage - Rated
110V
Current Rating
3.6A
Current - Test
50mA
Voltage - Test
50V
Power - Output
20W
Forward Transconductance Gfs (max / Min)
1.8 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
1.34 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
3.6 A
Power Dissipation
20 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4735
934061406112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF571,112
Manufacturer:
HITTITE
Quantity:
1 400
NXP Semiconductors
6. Characteristics
BLF571_2
Product data sheet
Table 6.
T
Table 7.
Mode of operation: CW; f = 225 MHz; RF performance at V
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter
V
V
V
I
I
I
g
R
C
C
C
Symbol
G
RL
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
iss
oss
p
= 25 C unless otherwise specified.
in
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
input capacitance
output capacitance
DC characteristics
RF characteristics
Parameter
power gain
input return loss
drain efficiency
Rev. 02 — 24 February 2009
Conditions
P
P
P
L
L
L
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
= 20 W
= 20 W
= 20 W
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
= 833 mA
= 10 V; I
= 50 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
DS
DS
D
D
D
= 0.25 mA
+ 3.75 V;
+ 3.75 V;
DS
= 25 mA
= 50 mA
= 1.25 A
HF / VHF power LDMOS transistor
= 50 V
= 50 V;
= 50 V;
= 50 V;
DS
= 0 V
= 50 V; I
Min
25.5
10
67
Min
110
1.25
1.25
-
3.0
-
-
-
-
-
-
Dq
= 50 mA; T
Typ
27.5
13
70
Typ
-
1.7
1.75
-
3.6
-
1.8
1.34
0.18
22.9
9.64
© NXP B.V. 2009. All rights reserved.
BLF571
Max
29.5
-
-
case
Max
-
2.25
2.25
1.4
-
140
-
-
-
-
-
= 25 C;
Unit
dB
dB
%
3 of 13
Unit
V
V
V
A
nA
S
pF
pF
pF
A

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