VRF154FL Microsemi Power Products Group, VRF154FL Datasheet
VRF154FL
Manufacturer Part Number
VRF154FL
Description
MOSFET RF PWR N-CH 50V 600W T2
Manufacturer
Microsemi Power Products Group
Datasheet
1.VRF154FL.pdf
(4 pages)
Specifications of VRF154FL
Transistor Type
N-Channel
Frequency
30MHz
Gain
17dB
Voltage - Rated
170V
Current Rating
60A
Current - Test
800mA
Voltage - Test
50V
Power - Output
600W
Package / Case
T2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
VRF154FLMP
VRF154FLMP
VRF154FLMP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VRF154FL
Manufacturer:
HITTITE
Quantity:
1 400
Part Number:
VRF154FL
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Part Number:
VRF154FLMP
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Maximum Ratings
The VRF154FL is a gold-metallized silicon n-channel RF power transis-
tor designed for broadband commercial and military applications requiring
high power and gain without compromising reliability, ruggedness, or inter-
modulation distortion.
Static Electrical Characteristics
Thermal Characteristics
FEATURES
• Improved Ruggedness V
• Designed for 2 - 100MHz Operation
• 600W with 17dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Confi guration
• RoHS Compliant
Symbol
Symbol
Symbol
V
RF POWER VERTICAL MOSFET
V
V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
R
(BR)DSS
I
V
T
DS(ON)
I
GS(TH)
V
DSS
GSS
g
P
T
I
θ JC
STG
DSS
fs
D
GS
D
J
Parameter
Drain-Source Breakdown Voltage (V
On State Drain Voltage (I
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Characteristic
Junction to Case Thermal Resistance
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device dissipation @ T
Storage Temperature Range
Operating Junction Temperature Max
(BR)DSS
= 170V
D(ON)
DS
Microsemi Website - http://www.microsemi.com
= 10V, I
C
= 40A, V
DS
= 25°C
C
= 10V, I
= 25°C
DS
DS
= ±20V, V
GS
D
= 100V, V
GS
= 100mA)
= 0V, I
D
= 10V)
• Nitride Passivated
• Economical Flangeless Package
• Refractory Gold Metallization
• High Voltage Replacement for MRF154
= 40A)
D
DS
= 100mA)
GS
= 0V)
= 0V)
All Ratings: T
C
=25°C unless otherwise specifi ed
Min
170
Min
2.9
16
S
VRF154FL
-65 to 150
1350
Typ
170
±40
200
180
3.0
3.6
Typ
60
50V, 600W, 80MHz
VRF154FL
D
G
Max
Max
0.13
5.0
4.0
4.0
4.4
mhos
S
°C/W
Unit
Unit
Unit
mA
μA
°C
W
V
V
V
V
A
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VRF154FL Summary of contents
Page 1
... RF POWER VERTICAL MOSFET The VRF154FL is a gold-metallized silicon n-channel RF power transis- tor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter- modulation distortion. FEATURES • Improved Ruggedness V = 170V (BR)DSS • Designed for 2 - 100MHz Operation • ...
Page 2
... DD DQ out 140 120 100 11V 9.0V 8.0V 7.0V 6. 100 C iss 10 C oss C rss 75 100 VRF154FL Min Typ Max 1750 775 135 Min Typ Max 17 45 -25 1 PEP 250μs PULSE TEST<0.5 % DUTY CYCLE T = -55° 25° 125°C ...
Page 3
D = 0.9 0.12 0.10 0.7 0.08 0.5 0.06 0.3 0.04 0.02 0.1 0. Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1200 Freq=30MHz 1000 800 600 400 200 0 0 ...
Page 4
... T2 - 1:9 Transformer Balun 50 Ohm CO-AX Cable RG-188,Low Impedance Lines W.L. Gore 16 Ohms CO-AX Type CXN 1837. Each Winding Threaded Through Two Fair-Rite Products Corp. #2661540001 Ferrite Sleeves (6 Each). XTR - VRF154 .466 .250 .250 .125d 1.250 1.500 VRF154FL L1 L2 C10 + C5 C4 OUTPUT C6 XTR XTR C7 ...