VRF154FL Microsemi Power Products Group, VRF154FL Datasheet - Page 2

• Manufacturer Part Number: VRF154FL
• Description: MOSFET RF PWR N-CH 50V 600W T2
• Manufacturer: Microsemi Power Products Group

Specifications of VRF154FL

• Transistor Type: N-Channel
• Frequency: 30MHz
• Gain: 17dB
• Voltage - Rated: 170V
• Current Rating: 60A
• Current - Test: 800mA
• Voltage - Test: 50V
• Power - Output: 600W
• Package / Case: T2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: VRF154FLMP; VRF154FLMP

Dynamic Characteristics
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Functional Characteristics
Typical Performance Curves
Symbol
Symbol
IMD
C
C
C
G
η
oss
ISS
rss
PS
1.0E−10
D
(d3)
1.0E−8
1.0E−9
160
140
120
100
80
60
40
20
V
V
0
DS
FIGURE 3, Capacitance vs Drain-to-Source Voltage
DS(ON
0
0
, GATE-TO-SOURCE VOLTAGE (V)
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
f = 30MHz, V
f = 30MHz, V
f1 = 30MHz, f2 = 30.001MHz, V
FIGURE 1, Output Characteristics
)
, DRAIN-TO-SOURCE VOLTAGE (V)
5
25
10
DD
DD
= 50V, I
= 50V, I
50
15
14V
DQ
DQ
11V
20
= 800mA, P
= 800mA, P
9.0V
75
V
GS
8.0V
7.0V
6.0V
5.0V
= 4.0V
25
DD
C
C
C
= 50V, I
rss
oss
iss
100
out
out
30
= 600W
= 600W
DQ
= 800mA, P
PEP
Test Conditions
out
V
f = 1MHz
V
DS
= 600W
GS
= 50V
= 0V
100
10
140
120
100
PEP
1
80
60
40
20
0
1
1
0
T
T
FIGURE 4, Forward Safe Operating Area
J
I
V
V
C
TEST<0.5 % DUTY
DMax
=
DS
FIGURE 2, Transfer Characteristics
DS
=
250μs PULSE
125°C
75°C
, DRAIN-TO-SOURCE VOLTAGE (V)
, DRAIN-TO-SOURCE VOLTAGE (V)
CYCLE
R ds(on)
2
10
T
T
J
Min
= -55°C
J
Min
= 25°C
4
PD Max
6
100
1750
Typ
775
135
Typ
-25
17
45
T
J
= 125°C
8
Max
Max
VRF154FL
800
10
Unit
Unit
dBc
pF
dB
%