MRF6V2300NBR5 Freescale Semiconductor, MRF6V2300NBR5 Datasheet - Page 6

• Manufacturer Part Number: MRF6V2300NBR5
• Description: MOSFET RF N-CH 50V TO-272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2300NBR5

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 25.5dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 900mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: TO-272-4
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 110V
• Rf Transistor Case: TO-272
• Transistor Polarity: N Channel
• Filter Terminals: SMD
• Operating Frequency Max: 220MHz
• Output Power Pout: 300W
• Gate-source Voltage: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MRF6V2300NBR5TR

6
MRF6V2300NR1 MRF6V2300NBR1
28
26
24
22
20
18
16
14
0
Figure 10. Power Gain versus Output Power
V
DD
50
= 20 V
100
P
25 V
out
, OUTPUT POWER (WATTS) CW
150
30 V
200
35 V
29
28
27
26
25
24
23
22
25
24
23
22
21
20
19
18
17
16
15
Figure 13. VHF Broadcast Broadband Performance
250
160
5
40 V
25_C
IMD3
η
Figure 12. Power Gain and Drain Efficiency
G
D
ps
300
170
T
V
I
C
DQ
TYPICAL CHARACTERISTICS
10
DD
I
f = 220 MHz
= --30_C
45 V
DQ
= 1100 mA, Tone--Spacing = 100 kHz
= 50 V, P
85_C
= 900 mA
350
180
P
versus CW Output Power
out
50 V
, OUTPUT POWER (WATTS) CW
out
η
f, FREQUENCY (MHz)
400
190
D
= 300 W (Peak)
G
ps
200
210
100
60
55
50
45
40
35
V
f = 220 MHz
10
85_C
I
DQ
DD
= 900 mA
= 50 Vdc
220
Figure 11. Power Output versus Power Input
25_C
15
230
--30_C
600
240
P
in
80
70
60
50
40
30
20
10
65
60
55
50
45
40
35
30
25
20
15
, INPUT POWER (dBm)
20
25_C
Freescale Semiconductor
--28
--29
--30
--31
--32
--33
25
T
C
= --30_C
85_C
V
I
f = 220 MHz
RF Device Data
DQ
DD
= 900 mA
30
= 50 Vdc
35