2N5953 Fairchild Semiconductor, 2N5953 Datasheet - Page 85
![AMP RF N-CHAN 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
2N5953
Manufacturer Part Number
2N5953
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N5953
Transistor Type
N-Channel JFET
Frequency
1kHz
Voltage - Rated
30V
Current Rating
5mA
Noise Figure
2dB
Voltage - Test
15V
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
0.8 V to 3 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
2.5 mA to 5 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5953
Manufacturer:
FAIRCHILD
Quantity:
38 600
Company:
Part Number:
2N5953
Manufacturer:
FAIRCHILD
Quantity:
38 600
- Current page: 85 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Bipolar Power Transistors – Darlington Transistors (Continued)
Products
TO-252(DPAK) NPN Configuration
KSH112
MJD112
KSH122
MJD122
TO-252(DPAK) PNP Configuration
KSH117
MJD117
KSH127
MJD127
TO-3P NPN Configuration
TIP140
TIP142
KSC5047
TO-3P PNP Configuration
TIP146
TIP147
TO-3PF NPN Configuration
TIP142F
TO-3PF PNP Configuration
TIP147F
I
C
10
10
15
10
10
10
10
2
2
8
8
2
2
8
8
(A)
V
CEO
100
100
100
100
100
100
100
100
100
100
100
100
60
50
80
(V) V
CBO
100
100
100
100
100
100
100
100
100
100
100
100
100
60
80
(V) V
EBO
15
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
125
125
100
125
125
20
20
20
20
20
20
20
20
60
60
(W)
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
Min
40
2-80
Discrete Power Products –
12000
12000
12000
12000
12000
12000
12000
12000
Max
–
–
–
–
–
–
–
h
FE
@I
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @V
CE
3
3
4
4
3
3
4
4
4
4
5
4
4
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
V
CE
(sat)
C
2
2
4
4
2
2
4
4
5
5
5
5
5
5
5
(A) @I
0.008
0.008
0.016
0.016
0.008
0.008
0.016
0.016
0.01
0.01
0.12
0.01
0.01
0.01
0.01
B
(A)
Related parts for 2N5953
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: