2N5953 Fairchild Semiconductor, 2N5953 Datasheet - Page 98
![AMP RF N-CHAN 30V TO-92](/photos/5/41/54198/to-92_pkg_sml.jpg)
2N5953
Manufacturer Part Number
2N5953
Description
AMP RF N-CHAN 30V TO-92
Manufacturer
Fairchild Semiconductor
Specifications of 2N5953
Transistor Type
N-Channel JFET
Frequency
1kHz
Voltage - Rated
30V
Current Rating
5mA
Noise Figure
2dB
Voltage - Test
15V
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
N-Channel
Drain Source Voltage Vds
15 V
Gate-source Cutoff Voltage
0.8 V to 3 V
Gate-source Breakdown Voltage
- 30 V
Maximum Drain Gate Voltage
30 V
Drain Current (idss At Vgs=0)
2.5 mA to 5 mA
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Configuration
Single
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5953
Manufacturer:
FAIRCHILD
Quantity:
38 600
Company:
Part Number:
2N5953
Manufacturer:
FAIRCHILD
Quantity:
38 600
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Small Signal Transistors – Darlington Transistors (Continued)
KSP14
MPSA13
MPSA14
BC517
KSP25
2N5307
2N5308
2N6427
2N6426
BSR50
KSP26
KSP27
MPSA27
MPSA28
MPSA29
2N7051
2N7052
TO-92 PNP Configuration
MPSA77
KSP62
KSP63
KSP64
BC516
MPSA63
MPSA64
MPSA65
KSP75
KSP76
KSP77
Products
V
CEO
100
100
100
30
30
30
40
40
40
40
40
40
45
50
60
60
80
20
30
30
30
30
30
30
40
50
60
–
(V)
V
CBO
100
100
100
30
30
30
30
40
40
40
40
40
60
50
60
60
80
60
20
30
30
40
30
30
30
40
50
60
(V)
V
EBO
10
10
10
10
10
12
12
12
12
10
10
10
12
12
12
12
10
10
10
10
10
10
10
10
10
10
10
5
(V)
Max (A)
0.5
1.2
1.2
0.5
1.2
1.2
1.2
1.2
0.5
0.5
0.8
0.8
0.8
1.5
1.5
1.2
0.5
0.5
0.5
1.2
1.2
1.2
0.5
0.5
0.5
I
–
–
1
C
20000
10000
20000
30000
10000
20000
30000
10000
10000
10000
10000
10000
10000
20000
10000
20000
30000
10000
20000
20000
10000
10000
10000
7000
1000
1000
2000
1000
Min
2-93
Discrete Power Products –
200000
300000
20000
70000
20000
20000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
10
CE
5
5
5
2
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
5
5
5
5
5
5
(V) @I
1000
1000
C
100
100
100
100
100
100
150
100
100
100
100
100
100
100
100
100
100
100
100
100
100
20
10
20
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
1.5
1.5
1.5
1.5
1.4
1.4
1.5
1.5
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1
1
1
@I
V
CE (sat)
C
100
100
100
100
100
200
200
500
500
500
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
10
(mA) @I
0.01
B
0.1
0.1
0.1
0.1
0.2
0.2
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
10
10
(mA)
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