BF1105R,215 NXP Semiconductors, BF1105R,215 Datasheet - Page 3

• Manufacturer Part Number: BF1105R,215
• Description: MOSFET N-CH 7V 30MA SOT-143R
• Manufacturer: NXP Semiconductors

Specifications of BF1105R,215

• Package / Case: SOT-143R
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 20dB
• Voltage - Rated: 7V
• Current Rating: 30mA
• Noise Figure: 1.7dB
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 7 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: Dual N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050330215; BF1105R T/R; BF1105R T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1997 Dec 02
handbook, halfpage
V
I
I
I
P
T
T
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.4 Power derating curve.
40
PARAMETER
80
120
T amb (°C)
MGM243
160
T
amb
 80 C; note 1; see Fig.4
3
CONDITIONS
BF1105; BF1105R; BF1105WR





65

MIN.
7
30
10
10
200
+150
+150
Product specification
MAX.
V
mA
mA
mA
mW
C
C
UNIT