BF1105R,215 NXP Semiconductors, BF1105R,215 Datasheet - Page 3
![MOSFET N-CH 7V 30MA SOT-143R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BF1105R,215
Manufacturer Part Number
BF1105R,215
Description
MOSFET N-CH 7V 30MA SOT-143R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1105R215.pdf
(15 pages)
Specifications of BF1105R,215
Package / Case
SOT-143R
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
20dB
Voltage - Rated
7V
Current Rating
30mA
Noise Figure
1.7dB
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
7 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
Dual N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934050330215
BF1105R T/R
BF1105R T/R
BF1105R T/R
BF1105R T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1997 Dec 02
handbook, halfpage
V
I
I
I
P
T
T
SYMBOL
D
G1
G2
stg
j
DS
tot
N-channel dual-gate MOS-FETs
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Fig.4 Power derating curve.
40
PARAMETER
80
120
T amb (°C)
MGM243
160
T
amb
80 C; note 1; see Fig.4
3
CONDITIONS
BF1105; BF1105R; BF1105WR
65
MIN.
7
30
10
10
200
+150
+150
Product specification
MAX.
V
mA
mA
mA
mW
C
C
UNIT