BF998R,215 NXP Semiconductors, BF998R,215 Datasheet - Page 7
![MOSFET N-CH 12V 30MA SOT143R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BF998R,215
Manufacturer Part Number
BF998R,215
Description
MOSFET N-CH 12V 30MA SOT143R
Manufacturer
NXP Semiconductors
Datasheet
1.BF998R215.pdf
(15 pages)
Specifications of BF998R,215
Package / Case
SOT-143R
Current Rating
30mA
Frequency
200MHz
Transistor Type
N-Channel Dual Gate
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934002660215::BF998R T/R::BF998R T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF998R,215
Manufacturer:
INFINEON
Quantity:
63 000
NXP Semiconductors
1996 Aug 01
Silicon N-channel dual-gate MOS-FETs
Fig.15 Forward transfer admittance and phase as a
V
(mS)
V
y fs
DS
DS
10
10
(mS)
Fig.13 Input admittance as a function of the
y is
1
= 8 V; V
= 8 V; V
10
10
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
10
y fs
ϕ
amb
amb
2
fs
b is
g is
= 25 C.
= 25 C.
f (MHz)
f (MHz)
MGC468
MGC466
10
3
10
10
10
1
(deg)
ϕ
3
2
fs
7
Fig.14 Reverse transfer admittance and phase as a
V
V
(μS)
y rs
DS
DS
10
10
Fig.16 Output admittance as a function of the
10
(mS)
1
= 8 V; V
y os
= 8 V; V
10
10
3
2
10
10
1
1
2
10
function of frequency; typical values.
G2-S
G2-S
frequency; typical values.
= 4 V; I
= 4 V; I
D
D
= 10 mA; T
= 10 mA; T
10
2
ϕ
y rs
10
BF998; BF998R
rs
amb
amb
2
= 25 C.
= 25 C.
f (MHz)
Product specification
f (MHz)
b os
g os
MGC467
MGC469
10
3
10
10
10
10
1
(deg)
ϕ
3
3
2
rs