BF1201WR,115 NXP Semiconductors, BF1201WR,115 Datasheet - Page 10
![MOSFET NCH DUAL GATE 10V SOT343R](/photos/5/63/56355/568-cmpak-4_sot343r_sml.jpg)
BF1201WR,115
Manufacturer Part Number
BF1201WR,115
Description
MOSFET NCH DUAL GATE 10V SOT343R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1201WR115.pdf
(15 pages)
Specifications of BF1201WR,115
Package / Case
CMPAK-4
Current Rating
30mA
Frequency
400MHz
Gain
29dB
Transistor Type
N-Channel Dual Gate
Noise Figure
1dB
Current - Test
15mA
Voltage - Test
5V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
10 V
Gate-source Breakdown Voltage
6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055961115::BF1201WR T/R::BF1201WR T/R
NXP Semiconductors
PACKAGE OUTLINES
2000 Mar 29
Plastic surface-mounted package; 4 leads
N-channel dual-gate PoLo MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
10
1
B
1.7
e 1
v
M
H E
2.5
2.1
BF1201; BF1201R; BF1201WR
2 mm
A
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143B
X