BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 13

MOSFET N-CH 14V 30MA SOT143

BF1100,215

Manufacturer Part Number
BF1100,215
Description
MOSFET N-CH 14V 30MA SOT143
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1100,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Voltage - Rated
14V
Current Rating
30mA
Noise Figure
2dB
Current - Test
10mA
Voltage - Test
9V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
14 V
Gate-source Breakdown Voltage
13.2 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW @ Ta=50C
Transistor Polarity
N-Channel
Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
14V
Noise Figure (max)
2.8dB
Frequency (max)
1GHz
Package Type
SOT
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
Output Capacitance (typ)@vds
1.4@9V/1.1@12VpF
Reverse Capacitance (typ)
0.025@9V/0.025@12VpF
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200@Ta=50CmW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934036550215
BF1100 T/R
BF1100 T/R
NXP Semiconductors
PACKAGE OUTLINES
handbook, full pagewidth
handbook, full pagewidth
Dual-gate MOS-FETs
Dimensions in mm.
Dimensions in mm.
max
10
0.40
0.25
max
10
o
o
0.75
0.60
max
1.1
max
1.1
max
30
max
30
0.150
0.090
o
max
0.150
0.090
0.1
max
o
10
max
0.1
max
10
o
o
Rev. 02 - 13 November 2007
Fig.29 SOT143R.
Fig.28 SOT143.
0.88
0.48
0.38
0.1
4
0
0.1
TOP VIEW
2
3
M
1
3.0
2.8
1.9
TOP VIEW
1.7
1.7
B
3.0
2.8
1.9
1
3
2
0.48
4
0.88
0.78
0
0.1
0.1
A
B
1.4
1.2
A
B
1.4
1.2
M
MBC844
max
A B
2.5
max
2.5
BF1100; BF1100R
0.2
MBC845
0.2
M
M
A B
A
Product specification
13 of 15

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