BF904AWR,115 NXP Semiconductors, BF904AWR,115 Datasheet - Page 5

• Manufacturer Part Number: BF904AWR,115
• Description: MOSFET N-CH 7V 30MA SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF904AWR,115

• Transistor Type: N-Channel Dual Gate
• Frequency: 200MHz
• Voltage - Rated: 7V
• Current Rating: 30mA
• Noise Figure: 1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Package / Case: SOT-343R
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055136115; BF904AWR T/R; BF904AWR T/R

Philips Semiconductors
1999 May 14
handbook, halfpage
N-channel dual gate MOS-FETs
(dB V)
V
f
Fig.7
unw
V unw
DS
Fig.5
(mS)
Y fs
= 60 MHz; T
= 5 V; V
120
110
100
90
80
40
30
20
10
0
0
50
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
GG
Transfer admittance as a function of the
junction temperature; typical values.
= 5 V; f
amb
10
= 25 C; R
w
0
= 50 MHz.
20
G1
= 120 k
50
30
gain reduction (dB)
100
40
T ( C)
MRA771
j
MLD268
o
50
150
5
handbook, halfpage
reduction
V
T
gain
(dB)
f = 50 MHz.
j
DS
= 25 C.
(mA)
= 5 V.
Fig.8 Transfer characteristics; typical values.
Fig.6
I D
BF904A; BF904AR; BF904AWR
10
20
30
40
50
0
20
15
10
5
0
0
0
Typical gain reduction as a function of
the AGC voltage; see Fig.21.
0.4
1
0.8
V
G2 S
2
1.2
= 4 V
Product specification
3
V
3 V
1.6
AGC
V
G1 S
MRA769
2.5 V
2 V
1.5 V
1 V
MLD270
(V)
4
(V)
2.0