BF1210,115 NXP Semiconductors, BF1210,115 Datasheet - Page 17

• Manufacturer Part Number: BF1210,115
• Description: MOSFET N-CH DUAL GATE 6V UMT6
• Manufacturer: NXP Semiconductors

Specifications of BF1210,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 31dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 6V
• Power Gain (typ)@vds: 35@5V@Amp A/36@5V@Amp BdB
• Noise Figure (max): 1.9dB
• Package Type: SOT-363
• Pin Count: 6
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1@Amp A/3@5V@Gate 2@Amp A/1.9@5V@Gate 1@Amp B/3.4@5V@Gate 2@Amp BpF
• Output Capacitance (typ)@vds: 0.9@5V@Amp A/0.85@5V@Amp BpF
• Reverse Capacitance (typ): 0.02@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 180mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934060847115; BF1210 T/R; BF1210 T/R

NXP Semiconductors
Table 12.
V
Table 13.
V
9. Test information
BF1210_1
Product data sheet
f (MHz)
40
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
DS(B)
DS(B)
Fig 32. Cross modulation test setup (for one MOSFET)
= 5 V; V
= 5 V; V
s
Magnitude
(ratio)
0.9874
0.9883
0.9844
0.9777
0.9684
0.9578
0.9442
0.9291
0.9147
0.9002
0.8836
Scattering parameters for amplifier B
Noise data for amplifier B
11
G2-S
G2-S
8.3.2 Scattering parameters for amplifier B
8.4 Noise data for amplifier B
= 4 V; I
= 4 V; I
NF
0.9
1.2
D(B)
D(B)
min
Angle
(deg)
2.79
6.8
13.52
20.2
26.83
33.32
39.8
46.08
52.18
58.35
64.49
= 13 mA; V
= 13 mA, T
(dB)
R GEN
50
V I
s
Magnitude
(ratio)
3.41
3.41
3.39
3.36
3.32
3.27
3.21
3.16
3.08
3.08
2.93
21
amb
DS(A)
R2
50
= 25 C; typical values.
4.7 nF
= 0 V; V
C2
Rev. 01 — 25 October 2006
(ratio)
0.743
0.687
opt
V
V
AGC
GG
G1-S(A)
R1
10 k
R G1
Angle
(deg)
177.08
172.57
165.23
157.88
150.6
143.38
136.22
129.15
122.25
115.4
108.49
4.7 nF
C1
= 0 V; T
s
Magnitude
(ratio)
0.00054
0.00113
0.00224
0.00336
0.00447
0.0055
0.00649
0.00741
0.00828
0.00914
0.00997
12
amb
DUT
V
= 25 C; typical values.
DS
(deg)
20.27
42.08
L1
2.2 H
4.7 nF
4.7 nF
C3
C4
Dual N-channel dual gate MOSFET
Angle
(deg)
89.27
90.81
89.67
89.02
88.43
87.64
87.53
87.51
87.7
88.14
88.26
001aad926
R L
50
s
Magnitude
(ratio)
0.992
0.9900
0.9897
0.9889
0.9881
0.9870
0.9851
0.9838
0.9825
0.9803
0.9789
22
r
0.65
0.581
n
(ratio)
© NXP B.V. 2006. All rights reserved.
BF1210
Angle
(deg)
1.26
2.91
5.81
8.7
11.61
14.52
17.39
20.3
23.2
26.06
29.03
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