BF1208,115 NXP Semiconductors, BF1208,115 Datasheet - Page 3

• Manufacturer Part Number: BF1208,115
• Description: MOSFET N-CH DUAL GATE SSMINI-6
• Manufacturer: NXP Semiconductors

Specifications of BF1208,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 32dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 1.3dB
• Current - Test: 19mA
• Voltage - Test: 5V
• Configuration: Dual Common Source
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 180 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058529115; BF1208 T/R; BF1208 T/R

Philips Semiconductors
3. Ordering information
4. Marking
5. Limiting values
9397 750 14254
Product data sheet
Table 3:
Table 4:
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Type number
BF1208
Type number
BF1208
Symbol
Per MOSFET
V
I
I
I
P
T
T
D
G1
G2
Fig 1. Power derating curve
stg
j
DS
tot
T
sp
is the temperature at the soldering point of the source lead.
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage (DC)
drain current (DC)
gate1 current
gate2 current
total power dissipation
storage temperature
junction temperature
Package
Name
-
(mW)
P
tot
Rev. 01 — 16 March 2005
250
200
150
100
50
0
Description
plastic surface mounted package; 6 leads
0
50
Conditions
T
100
sp
Marking code
2L
109 C
Dual N-channel dual gate MOSFET
150
T
001aac193
sp
[1]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
(˚C)
Min
-
-
-
-
-
-
65
200
Max
6
30
180
+150
150
10
10
BF1208
Unit
V
mA
mA
mA
mW
C
C
Version
SOT666
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