BF1204,115 NXP Semiconductors, BF1204,115 Datasheet - Page 3

• Manufacturer Part Number: BF1204,115
• Description: MOSFET N-CH DUAL GATE 10V SOT363
• Manufacturer: NXP Semiconductors

Specifications of BF1204,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current Rating: 30mA
• Frequency: 400MHz
• Gain: 30dB
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Dual Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056334115::BF1204 T/R::BF1204 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2010 Sep 16
handbook, halfpage
Per MOS-FET; unless otherwise specified
V
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G1
G2
stg
j
DS
tot
Dual N-channel dual gate MOS-FET
th j-s
(mW)
P tot
250
200
150
100
50
0
0
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
150
T s (°C)
PARAMETER
MGS359
200
T
s
 102 C
3
CONDITIONS





65

MIN.
VALUE
240
10
30
10
10
200
+150
150
Product specification
MAX.
BF1204
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT