BF1102R,115 NXP Semiconductors, BF1102R,115 Datasheet - Page 2
BF1102R,115
Manufacturer Part Number
BF1102R,115
Description
MOSFET N-CH 7V 40MA SOT363R
Manufacturer
NXP Semiconductors
Datasheet
1.BF1102R115.pdf
(14 pages)
Specifications of BF1102R,115
Package / Case
SC-70-6, SC-88, SOT-363
Current Rating
40mA
Frequency
800MHz
Transistor Type
N-Channel Dual Gate
Noise Figure
2dB
Current - Test
15mA
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
0.04 A
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055823115::BF1102R T/R::BF1102R T/R
NXP Semiconductors
FEATURES
Two low noise gain controlled amplifiers in a single
Specially designed for 5 V applications
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
APPLICATIONS
Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5 V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
QUICK REFERENCE DATA
Note
1. T
2000 Apr 11
Per MOS-FET unless otherwise specified
V
I
P
y
C
C
F
X
T
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
D
package
ratio.
j
DS
tot
mod
Dual N-channel dual gate MOS-FETs
ig1-s
rss
fs
s
is the temperature at the soldering point of the source lead.
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
PARAMETER
T
I
I
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC
D
D
s
= 15 mA
= 15 mA
102 C; note 1
CAUTION
CONDITIONS
2
PINNING - SOT363
handbook, halfpage
BF1102 marking code: W1.
BF1102R marking code: W2-.
PIN
1
2
3
4
5
6
1
6
Fig.1 Simplified outline and symbol.
5
2
gate 1 (1)
gate 2 (1 and 2)
drain (1)
drain (2)
source (1 and 2) gate 2 (1 and 2)
gate 1 (2)
4
3
BF1102
g 1 (1)
g 1 (2)
36
100
MIN.
BF1102; BF1102R
DESCRIPTION
g 2 (1, 2)
gate 1 (1)
source (1 and 2)
drain (1)
drain (2)
gate 1 (2)
43
2.8
30
2
AMP2
s (1, 2)
TYP.
Product specification
AMP1
BF1102R
7
40
200
3.6
50
2.8
150
MAX.
MBL029
V
mA
mW
mS
pF
fF
dB
dBV
C
d (1)
d (2)
UNIT