ATF-36163-BLKG Avago Technologies US Inc., ATF-36163-BLKG Datasheet - Page 2

• Manufacturer Part Number: ATF-36163-BLKG
• Description: IC PHEMT 1.5-18GHZ LN SOT-363
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-36163-BLKG

• Gain: 15.8dB
• Transistor Type: pHEMT FET
• Frequency: 4GHz
• Voltage - Rated: 3V
• Current Rating: 40mA
• Noise Figure: 0.6dB
• Current - Test: 15mA
• Voltage - Test: 2V
• Power - Output: 5dBm
• Package / Case: SC-70-6, SC-88, SOT-363
• Drain Source Voltage Vds: 3V
• Power Dissipation Pd: 180mW
• Noise Figure Typ: 1.2dB
• Rf Transistor Case: SOT-363
• No. Of Pins: 6
• Frequency Max: 18GHz
• Frequency Min: 1.5GHz
• Drain Current Idss Max: 40mA
• C-e Breakdown Voltage: -3.5V
• Dc Current Gain Min (hfe): 10
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-36163 Absolute Maximum Ratings
ATF-36163 Electrical Specifications
Note:
1. Measured in a test circuit tuned for a typical device.
ATF-36163 Typical Parameters
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.
2
Symbol
BV
V
Symbol
Symbol
P
p 10%
I
G
NF
g
F
P
V
T
in max
dss
V
V
T
G
V
GDO
G
P
I
STG
m
min
max
1dB
GS
GD
CH
GS
DS
D
T
a
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Parameters and Test Conditions
Noise Figure
Gain at NF
Transconductance
Saturated Drain Current
Pinchoff Voltage
Gate Drain Breakdown Voltage
Parameters and Test Conditions
Minimum Noise Figure (Γ
Associated Gain
Maximum Available Gain
Output Power at 1 dB Gain Compression
under the power matched condition
Gate to Source Voltage for I
[1]
[1]
T
C
= 25°C, Z
T
C
= 25°C, Z
[1]
[1]
source
DS
O
= 15 mA
= 50 Ω, V
= Γ
V
DS
O
opt
= 1.5 V, I
= 50 Ω, V
Units
dBm
)
mW
mA
°C
°C
V
V
V
V
V
DS
DS
ds
= 1.5 V, V
= 1.5 V, V
= 2 V, I
DS
ds
= 10% of I
f = 12.0 GHz
f =12.0 GHz
= 1.5 V, I
f = 12 GHz
f = 12 GHz
f = 12 GHz
f = 12 GHz
V
I
G
f = 4 GHz
f = 4 GHz
f = 4 GHz
f = 4 GHz
DS
ds
= 30 µA
-65 to 150
GS
GS
Maximum
= 2.0 V
Absolute
= 15 mA, (unless otherwise noted).
= 0 V
= 0 V
-3.5
180
+10
150
I
+3
-3
dss
dss
ds
= 10 mA, (unless otherwise noted).
Thermal Resistance:
θ
Note:
1. Operation of this device above any one of
ch-c
these parameters may cause permanent
damage.
Units
mA
mS
dB
dB
= 160°C/W
V
V
Min.
-1.0
50
15
9
Units
dBm
dBm
dB
dB
dB
dB
dB
dB
V
-0.35
Typ.
1.2
10
60
25
15.8
17.2
10.9
Typ.
-0.2
1.4
-0.15
Max.
0.6
1.0
9.4
-3.5
5
5
40
[1]