ATF-551M4-BLK Avago Technologies US Inc., ATF-551M4-BLK Datasheet - Page 5

IC PHEMT 2GHZ 2.7V 10MA MINIPAK

ATF-551M4-BLK

Manufacturer Part Number
ATF-551M4-BLK
Description
IC PHEMT 2GHZ 2.7V 10MA MINIPAK
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-551M4-BLK

Package / Case
4-MiniPak (1412)
Mfg Application Notes
ATF-541M4 AppNote
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
17.5dB
Voltage - Rated
5V
Current Rating
100mA
Noise Figure
0.5dB
Current - Test
10mA
Voltage - Test
2.7V
Power - Output
14.6dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
270 mW
Drain Source Voltage Vds
5 V
Gate-source Breakdown Voltage
- 5 V to 1 V
Continuous Drain Current
100 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 5 V to 1 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Channel Type
N
Drain-gate Voltage (max)
-5 to 1V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
4
Continuous Drain Current Id
100mA
Power Dissipation Pd
270mW
Noise Figure Typ
0.5dB
Rf Transistor Case
MiniPak
No. Of Pins
4
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-551M4-BLK
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
5
Figure 11. Gain vs. I
Figure 14. IIP3 vs. I
with reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match
based on production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at
the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from
actual measurements.
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
20
19
18
17
16
15
18
16
14
12
10
8
6
4
2
0
0
0
5
5
10
10
I
I
15
15
ds
ds
ds
ds
(mA)
(mA)
and V
and V
20
20
ds
ds
25
25
at 2 GHz
at 2 GHz
30
30
2V
2.7V
3V
2V
2.7V
3V
[1]
[1]
.
35
35
.
Figure 12. Fmin vs. I
Figure 15. P1dB vs. I
17
16
15
14
13
12
11
10
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
5
5
10
10
I
I
15
15
ds
ds
ds
ds
(mA)
(mA)
and V
and V
20
20
ds
ds
25
25
at 2 GHz
at 2 GHz
2V
2.7V
3V
30
2V
2.7V
3V
30
[2]
[1]
35
35
.
.
Figure 13. OIP3 vs. I
36
32
28
24
20
16
0
5
10
I
15
ds
ds
(mA)
and V
20
ds
25
at 2 GHz
30
2V
2.7V
3V
[1]
35
.

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