ATF-34143-BLKG Avago Technologies US Inc., ATF-34143-BLKG Datasheet - Page 4
![IC PHEMT 1.9GHZ 60MA LN SOT-343](/photos/5/63/56361/sot-343_pkg_sml.jpg)
ATF-34143-BLKG
Manufacturer Part Number
ATF-34143-BLKG
Description
IC PHEMT 1.9GHZ 60MA LN SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-34143-TR1G.pdf
(15 pages)
Specifications of ATF-34143-BLKG
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
pHEMT FET
Frequency
2GHz
Gain
17.5dB
Voltage - Rated
5.5V
Current Rating
145mA
Noise Figure
0.5dB
Current - Test
60mA
Voltage - Test
4V
Power - Output
20dBm
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Power Dissipation
725 mW
Drain Source Voltage Vds
5.5 V
Gate-source Breakdown Voltage
- 5 V
Continuous Drain Current
145 mA
Maximum Operating Temperature
+ 160 C
Maximum Drain Gate Voltage
- 5 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation Pd
725mW
Noise Figure Typ
0.5dB
Rf Transistor Case
SOT-343
No. Of Pins
4
Frequency Max
6GHz
Filter Terminals
SMD
Frequency Min
450MHz
Rohs Compliant
Yes
Drain Current Idss Max
60mA
Drain-source Breakdown Voltage
5.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
516-1863
ATF-34143-BLKG
ATF-34143-BLKG
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-34143-BLKG
Manufacturer:
AVAGO
Quantity:
100 000
Part Number:
ATF-34143-BLKG
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-34143 Typical Performance Curves
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4V, 60 mA
2. P
4
Figure 6. OIP3 and P
4 V, 60 mA at 2 GHz.
Figure 9. OIP3 and P
4 V, 60 mA at 900 MHz.
Figure 12. Fmin vs. Frequency and Current at 4 V.
bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
B as power output approaches P
current source as is typically done with active biasing. As an example, at a V
is approached.
1dB
1.2
1.0
0.8
0.6
0.4
0.2
35
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
0
0
0
0
measurements are performed with passive biasing. Quicescent drain current, I
20
20
OIP3
OIP3
40
2.0
40
1dB
[1,2]
1dB
FREQUENCY (GHz)
P
1dB
P
[1,2]
60
I
vs. I
1dB
I
vs. I
DSQ
DSQ
60
(mA)
(mA)
DS
DS
and V
and V
80
4.0
80
100
DS
DS
Tuned for NF @
Tuned for NF @
1dB
100
120
3 V
4 V
3 V
4 V
60 mA
40 mA
20 mA
. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
140
120
6.0
Figure 7. Associated Gain vs. Current (I
(V
Figure 10. Associated Gain vs. Current (I
(V
Figure 13. Associated Gain vs. Frequency and Current
at 4 V.
D
D
20
15
10
25
20
15
10
25
20
15
10
) at 2 GHz.
) at 900 MHz.
5
5
0
5
0
0
0
0
1.0
20
20
[1,2]
[1,2]
2.0
40
40
FREQUENCY (GHz)
CURRENT (mA)
CURRENT (mA)
3.0
60
60
DS
4.0
80
80
= 4 V and I
d
) and Voltage
d
) and Voltage
DSQ
100
100
5.0
60 mA
40 mA
20 mA
3 V
4 V
3 V
4 V
, is set with zero RF drive applied. As P
DSQ
120
120
6.0
= 10 mA, I
Figure 8. Noise Figure vs. Current (I
(V
Figure 11. Noise Figure vs. Current (I
(V
d
DS
DS
0.8
0.6
0.4
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
increases to 62 mA as a P
1
0
) at 2 GHz.
0
) at 900 MHz.
DSQ
0
0
the device is running closer to class
20
20
[1,2]
[1,2]
40
40
CURRENT (mA)
CURRENT (mA)
60
60
1dB
1dB
is approached,
80
80
d
) and Voltage
d
of +19 dBm
) and Voltage
100
100
3 V
4 V
3 V
4 V
120
120