BLF6G38-10,112 NXP Semiconductors, BLF6G38-10,112 Datasheet - Page 5
![IC WIMAX 3.8GHZ 2-LDMOST](/photos/5/64/56475/2-ldmost_sot957a_pkg_sml.jpg)
BLF6G38-10,112
Manufacturer Part Number
BLF6G38-10,112
Description
IC WIMAX 3.8GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-10G112.pdf
(15 pages)
Specifications of BLF6G38-10,112
Package / Case
SOT957A
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
14dB
Voltage - Rated
65V
Current Rating
3.1A
Current - Test
130mA
Voltage - Test
28V
Power - Output
2W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.1 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061846112
BLF6G38-10
BLF6G38-10
BLF6G38-10
BLF6G38-10
NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 1.
Fig 3.
EVM
(%)
12
8
4
0
10
V
EVM as a function of load power;
typical values
V
Adjacent channel power ratio as a function of average load power; typical values
DS
DS
1
= 28 V; I
= 28 V; I
7.2.2 Graphs
Dq
Dq
= 130 mA; f = 3500 MHz.
= 130 mA; f = 3500 MHz.
1
ACPR
(dBc)
P
20
30
40
50
60
L
10
(W)
1
001aaj362
Rev. 01 — 3 February 2009
10
BLF6G38-10; BLF6G38-10G
1
Fig 2.
(dB)
G
P
L(AV)
p
20
18
16
14
12
10
10
ACPR
ACPR
ACPR
V
Power gain and drain efficiency as function of
average load power; typical values
(W)
1
DS
001aaj364
= 28 V; I
10M
20M
30M
10
G
D
p
Dq
WiMAX power LDMOS transistor
= 130 mA; f = 3500 MHz.
1
P
L(AV)
© NXP B.V. 2009. All rights reserved.
(W)
001aaj363
10
50
40
30
20
10
0
(%)
D
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