BLF7G20L-140P,112 NXP Semiconductors, BLF7G20L-140P,112 Datasheet - Page 2

• Manufacturer Part Number: BLF7G20L-140P,112
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-140P,112

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064455112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF7G20LS-140P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4
5
Type number
BLF7G20LS-140P -
Symbol
V
V
T
Symbol
R
T
stg
j
DS
GS
th(j-c)
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
Rev. 2 — 17 August 2010
earless flanged LDMOST ceramic package; 4 leads
Conditions
[1]
Simplified outline
Conditions
T
BLF7G20LS-140P
case
1
3
= 80 °C; P
2
4
Power LDMOS transistor
5
L
= 100 W
Graphic symbol
-
Min
-
−0.5
−65
© NXP B.V. 2010. All rights reserved.
3
4
Max
65
+13
+150
200
Typ
0.41 K/W
Version
SOT1121B
1
2
sym117
2 of 13
5
Unit
Unit
V
V
°C
°C