BLF7G20L-140P,112 NXP Semiconductors, BLF7G20L-140P,112 Datasheet - Page 8

• Manufacturer Part Number: BLF7G20L-140P,112
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-140P,112

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 850mA
• Voltage - Test: 28V
• Power - Output: 125W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064455112

NXP Semiconductors
BLF7G20LS-140P
Product data sheet
Fig 12. Component layout for class-AB production test circuit
Printed-Circuit Board (PCB): Taconic RF35; ε
See
Table 8
C1
7.8 Impedance information
BLF7G20L-140P
for a list of components.
Table 9.
Typical values valid for both section in parallel unless otherwise specified.
f
MHz
1800
1840
1880
Fig 13. Definition of transistor impedance
C4
C5
R1
R2
INPUT REV 1
C2
C3
Typical impedance
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 August 2010
r
= 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 μm.
Z
Ω
1.1 − j3.8
1.3 − j3.7
1.2 − j3.8
S
gate
Z
S
BLF7G20L-140P
001aal831
BLF7G20LS-140P
drain
Z
C7
C6
L
Z
Ω
1.8 − j2.8
1.7 − j2.6
1.6 − j2.5
L
OUTPUT REV 1
C10
C9
Power LDMOS transistor
C8
C11
© NXP B.V. 2010. All rights reserved.
001aal830
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