BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 4

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
Table 7.
T
[1]
[2]
BLF881_BLF881S
Product data sheet
Symbol
DVB-T (8k OFDM)
V
I
P
G
η
IMD
PAR
Dq
h
D
DS
L(AV)
p
= 25
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
shldr
°
C unless otherwise specified.
RF characteristics
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
Fig 1.
…continued
V
Output capacitance as a function of drain-source voltage; typical values
GS
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
Rev. 3 — 7 December 2010
oss
200
160
120
80
40
0
0
Conditions
20
40
BLF881; BLF881S
60
V
001aal074
DS
UHF power LDMOS transistor
(V)
[1]
[2]
80
Min
-
-
-
20
30
-
-
Typ
50
0.5
33
21
34
−33
8.3
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
-
-
−30
-
Unit
V
A
W
dB
%
dBc
dB
4 of 18