BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 8

TRANSISTOR PWR LDMOS SOT502B

BLF7G22LS-130,112

Manufacturer Part Number
BLF7G22LS-130,112
Description
TRANSISTOR PWR LDMOS SOT502B
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BLF7G22LS-130,112

Transistor Type
LDMOS
Frequency
2.11GHz ~ 2.17GHz
Gain
18.5dB
Voltage - Rated
65V
Current - Test
950mA
Voltage - Test
28V
Power - Output
30W
Package / Case
SOT502B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934063501112
NXP Semiconductors
BLF881_BLF881S
Product data sheet
7.4 Reliability
Fig 9.
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
BLF881 electromigration
1
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
= 100 °C
= 110 °C
= 120 °C
= 130 °C
= 140 °C
= 150 °C
= 160 °C
= 170 °C
= 180 °C
= 190 °C
= 200 °C
0
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
(7)
(1)
2
(2)
(8)
(3)
(9)
(4)
(10) (11)
(5)
(6)
BLF881; BLF881S
4
UHF power LDMOS transistor
I
DS(DC)
(A)
© NXP B.V. 2010. All rights reserved.
001aal082
6
8 of 18

Related parts for BLF7G22LS-130,112