BLF278/01,112 NXP Semiconductors, BLF278/01,112 Datasheet - Page 6

• Manufacturer Part Number: BLF278/01,112
• Description: TRANSISTOR VHF PWR DMOS SOT262A1
• Manufacturer: NXP Semiconductors

Specifications of BLF278/01,112

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 108MHz
• Gain: 22dB
• Voltage - Rated: 125V
• Current Rating: 18A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: SOT-262A1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934031850112

Philips Semiconductors
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. T
otherwise specified. R
Ruggedness in class-B operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the
following conditions: V
2003 Sep 19
handbook, halfpage
CW, class-B
CW, class-C
VHF push-pull power MOS transistor
V
Fig.8
(pF)
C rs
GS
MODE OF OPERATION
400
300
200
100
= 0; f = 1 MHz.
0
0
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
10
GS
DS
20
= 4
= 50 V; f = 108 MHz at rated load power.
per section; optimum load impedance per section = 3.2 + j4.3
30
(MHz)
108
108
40
f
V DS (V)
MGE620
50
V
(V)
50
50
DS
6
V
2
GS
I
(A)
DQ
0.1
= 0
300
300
(W)
P
h
L
= 25 C; R
th mb-h
typ. 22
typ. 18
(dB)
G
20
p
(V
= 0.15 K/W unless
Product Specification
DS
= 50 V).
BLF278
typ. 70
typ. 80
>60
(%)
D