VRF2933 Microsemi Power Products Group, VRF2933 Datasheet - Page 3

• Manufacturer Part Number: VRF2933
• Description: MOSFET RF PWR N-CH 50V 300W M177
• Manufacturer: Microsemi Power Products Group

Specifications of VRF2933

• Transistor Type: N-Channel
• Frequency: 30MHz
• Gain: 22dB
• Voltage - Rated: 170V
• Current Rating: 40A
• Current - Test: 250mA
• Voltage - Test: 50V
• Power - Output: 300W
• Package / Case: M177
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: VRF2933MP; VRF2933MP

500
450
400
350
300
250
200
150
100
0.25
0.15
50
0.05
0.30
0.20
0.10
0
0
0
10
Freq=30MHz
-5
Dissipated Power
0.5
P
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
out
D = 0.9
Z
, INPUT POWER (WATTS PEP)
Freq. (MHz)
Z
0.3
0.05
0.7
0.5
0.1
IN
Figure 6. P
OL
(Watts)
- Gate shunted with 25Ω
- Conjugate of optimum load for 300 Watts output at V
1
13.5
27.1
40.7
100
150
65
2
1.5
Table 1 - Typical Class AB Large Signal Input - Output Impedance
OUT
10
FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL
-4
versus P
2
T
J
RECTANGULAR PULSE DURATION (seconds)
(°C)
IN
SINGLE PULSE
2.5
.009
.079
I
10
3
dq
-3
= 250mA
1.95 - j 2.07
1.78 + j 0.5
23.6 - j 5.5
7.6 - j 10.1
1.8 - j 0.66
.080
3.5 - j 6.0
2.5 - j 4.0
.076
Z
in
.224
500
450
400
350
300
250
200
150
100
.115
50
10
0
dd
T
0
-2
=150V
C
(°C)
Freq=65MHz
P
2
out
, INPUT POWER (WATTS PEP)
Figure 7. P
Note:
Peak T J = P DM x Z θJC + T C
4
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
1.03 + j 1.7
Duty Factor D =
1.76 - j 0.2
4.0 - j 0.1
3.9 - j 0.6
3.7 - j 1.1
3.3 - j 1.5
2.6 - j 1.9
t
1
are the external thermal
= Pulse Duration
10
Z
6
t 1
OUT
out
versus P
t 2
8
t 1
/
t 2
IN
40V
10
50V
1.0
12
VRF2933