BLA1011-200,112 NXP Semiconductors, BLA1011-200,112 Datasheet - Page 3

• Manufacturer Part Number: BLA1011-200,112
• Description: TRANS LDMOS NCH 75V SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current Rating: 1µA
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 200W
• Package / Case: SOT502A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: Avionics
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 75V
• Output Power (max): 250W(Typ)
• Power Gain (typ)@vds: 15@36VdB
• Frequency (min): 1.03GHz
• Frequency (max): 1.09GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 9S
• Drain Source Resistance (max): 60(Typ)@9Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 700000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934056468112; BLA1011-200; BLA1011-200

Philips Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
9397 750 14634
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5:
[1]
Table 6:
T
Table 7:
RF performance in a common source pulsed class-AB circuit; (t
and 1090 MHz; T
The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
Symbol
Z
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
P
G
t
t
DSS
DSX
GSS
r
f
j
fs
DS
th(j-h)
D
(BR)DSS
GS(th)
DS
L
DS(on)
p
= 25 C unless otherwise specified
Thermal resistance is determined under RF operating conditions; t
= 36 V; f = 1030 MHz to 1090 MHz at rated load power.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
transfer conductance
drain-source on-state resistance V
Parameter
thermal impedance from junction to heatsink T
Parameter
drain-source voltage
load power
power gain
drain efficiency
rise time
fall time
Thermal characteristics
Characteristics
Application information
h
= 25 C; Z
Rev. 08 — 26 October 2005
th(mb-h)
BLA1011-200; BLA1011S-200
= 0.15 K/W; I
Conditions
t
P
t
p
p
L
= 50 s; = 2 %
= 50 s; = 2 %
= 200 W
Conditions
V
V
V
V
V
V
GS
DS
GS
GS
DS
GS
DS
GS
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 20 V; V
= 9 V; I
Dq
= 150 mA; unless otherwise specified.
GS(th)
D
D
DS
D
D
= 3 mA
= 10 A
+ 9 V;
Conditions
= 300 mA
= 10 A
h
DS
= 36 V
= 25 C
= 0 V
p
p
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
= 50 s,
= 50 s; = 2 %); f = 1030 MHz
Min
-
-
13
45
-
-
Avionics LDMOS transistor
= 10 %.
Min
75
4
-
45
-
-
-
Typ
36
200
-
-
-
-
[1]
Typ
0.15
Typ
-
-
-
-
-
9
60
Max
-
50
50
Max Unit
-
5
1
-
1
-
-
Unit
K/W
Unit
V
W
dB
%
ns
ns
3 of 13
V
V
A
S
m
A
A