BLA1011S-200R,112 NXP Semiconductors, BLA1011S-200R,112 Datasheet - Page 3

• Manufacturer Part Number: BLA1011S-200R,112
• Description: TRANS LDMOS NCH 75V SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLA1011S-200R,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 200W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063386112

Philips Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
9397 750 14634
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5:
[1]
Table 6:
T
Table 7:
RF performance in a common source pulsed class-AB circuit; (t
and 1090 MHz; T
The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch
corresponding to VSWR = 5 : 1 through all phases under the following conditions:
V
Symbol
Z
Symbol Parameter
V
V
I
I
I
g
R
Symbol
V
P
G
t
t
DSS
DSX
GSS
r
f
j
fs
DS
th(j-h)
D
(BR)DSS
GS(th)
DS
L
DS(on)
p
= 25 C unless otherwise specified
Thermal resistance is determined under RF operating conditions; t
= 36 V; f = 1030 MHz to 1090 MHz at rated load power.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
transfer conductance
drain-source on-state resistance V
Parameter
thermal impedance from junction to heatsink T
Parameter
drain-source voltage
load power
power gain
drain efficiency
rise time
fall time
Thermal characteristics
Characteristics
Application information
h
= 25 C; Z
Rev. 08 — 26 October 2005
th(mb-h)
BLA1011-200; BLA1011S-200
= 0.15 K/W; I
Conditions
t
P
t
p
p
L
= 50 s; = 2 %
= 50 s; = 2 %
= 200 W
Conditions
V
V
V
V
V
V
GS
DS
GS
GS
DS
GS
DS
GS
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 20 V; V
= 9 V; I
Dq
= 150 mA; unless otherwise specified.
GS(th)
D
D
DS
D
D
= 3 mA
= 10 A
+ 9 V;
Conditions
= 300 mA
= 10 A
h
DS
= 36 V
= 25 C
= 0 V
p
p
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
= 50 s,
= 50 s; = 2 %); f = 1030 MHz
Min
-
-
13
45
-
-
Avionics LDMOS transistor
= 10 %.
Min
75
4
-
45
-
-
-
Typ
36
200
-
-
-
-
[1]
Typ
0.15
Typ
-
-
-
-
-
9
60
Max
-
50
50
Max Unit
-
5
1
-
1
-
-
Unit
K/W
Unit
V
W
dB
%
ns
ns
3 of 13
V
V
A
S
m
A
A