BLA1011S-200R,112 NXP Semiconductors, BLA1011S-200R,112 Datasheet - Page 5

• Manufacturer Part Number: BLA1011S-200R,112
• Description: TRANS LDMOS NCH 75V SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLA1011S-200R,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 13dB
• Voltage - Rated: 75V
• Current - Test: 150mA
• Voltage - Test: 36V
• Power - Output: 200W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063386112

Philips Semiconductors
9397 750 14634
Product data sheet
Fig 5. Power gain and drain efficiency a functions of
Fig 7. Load impedance as a function of frequency (series components); typical values
(dB)
G
20
15
10
p
1020
5
0
V
frequency; typical values
V
DS
DS
= 2 %
= 36 V; I
= 36 V; I
1040
Dq
Dq
G
= 150 mA; P
= 150 mA; P
p
1060
L
L
= 200 W; t
= 200 W; t
(W)
Z
D
1080
L
1020
4
2
0
2
4
f (MHz)
mgw037
p
p
= 50 s;
= 50 s; = 2 %
1100
Rev. 08 — 26 October 2005
1040
80
60
40
20
0
(%)
D
BLA1011-200; BLA1011S-200
1060
Fig 6. Input Impedance as a function of frequency
(W)
R
X
Z
L
L
1080
i
5
4
3
2
1
0
1020
V
(series components); typical values
DS
= 2 %
f (MHz)
= 36 V; I
mgw039
1100
r
x
1040
i
i
Dq
= 150 mA; P
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
1060
Avionics LDMOS transistor
L
= 200 W; t
1080
f (MHz)
p
mgw038
= 50 s;
1100
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