BLS6G3135-120,112 NXP Semiconductors, BLS6G3135-120,112 Datasheet - Page 10

• Manufacturer Part Number: BLS6G3135-120,112
• Description: TRANS LDMOS 3.5GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-120,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 3.1GHz ~ 3.5GHz
• Gain: 11dB
• Voltage - Rated: 60V
• Current Rating: 7.2A
• Current - Test: 100mA
• Voltage - Test: 32V
• Power - Output: 130W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 7.2 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060063112; BLS6G3135-120; BLS6G3135-120

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLS6G3135-120_6G3135S-120_2
Product data sheet
Document ID
BLS6G3135-120_6G3135S-120_2
Modifications:
BLS6G3135-120_6G3135S-120_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
S-Band
VSWR
Abbreviations
Release date
20080529
20070814
BLS6G3135-120; BLS6G3135S-120
•
Section 8 on page
Rev. 02 — 29 May 2008
Description
Laterally Diffused Metal Oxide Semiconductor
Lateral Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Preliminary data sheet
7: Component layout was added
LDMOS S-Band radar power transistor
Change notice
-
-
Supersedes
BLS6G3135-120_
6G3135S-120_1
-
© NXP B.V. 2008. All rights reserved.
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