BLA1011-300,112 NXP Semiconductors, BLA1011-300,112 Datasheet - Page 6

• Manufacturer Part Number: BLA1011-300,112
• Description: TRANS LDMOS NCH 75V SOT957A
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-300,112

• Transistor Type: LDMOS
• Frequency: 1.03GHz ~ 1.09GHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 15A
• Current - Test: 150mA
• Voltage - Test: 32V
• Power - Output: 300W
• Package / Case: SOT957A
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 934059724112; BLA1011-300; BLA1011-300

NXP Semiconductors
8. Test information
BLA1011-300_2
Product data sheet
Table 9.
To ensure good power supply of the device, adding an electrolytic capacitor close to the supply con-
nection of the circuit may be required. The actual capacitor value may differ depending on the pulse
format, the quality of the power supply and the length of the connecting wires to the power supply. In
general a value of 470 F will be sufficient.
Component Description
C1, C4
C2, C3
C5
C6, C8
C7
C9
C10
C11
C12
L1
R1
Fig 6. Component layout for common source class-AB pulsed production test circuit
C10
Printed-Circuit Board (PCB): Rogers Duroid 6006;
See
C5
List of components (see
C1
Table 9
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 1.5 pF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 1.2 nF
electrolytic capacitor
electrolytic capacitor
multilayer ceramic chip capacitor 47 pF
SMD resistor
-shaped enameled copper wire d = 1 mm;
R1
T1
for list of components.
Rev. 02 — 5 February 2008
R2
T2
C6
C7
C2
C3
Figure
T3
6)
Value
47 F; 20 V
47 F; 63 V
length = 38 mm
18
r
= 6.2 F/m; height = 0.64 mm.
T4
Avionics LDMOS transistors
[1]
[2]
[2]
[2]
[2]
[1]
[1]
BLA1011-300
Remarks
0508 package
T5
L1
C8 C9 C12
© NXP B.V. 2008. All rights reserved.
T6
T7 T8
001aah710
C11
C4
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