BLL6H1214-500,112 NXP Semiconductors, BLL6H1214-500,112 Datasheet - Page 16

• Manufacturer Part Number: BLL6H1214-500,112
• Description: TRANS L-BAND RADAR LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214-500,112

• Transistor Type: LDMOS
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Rated: 100V
• Current Rating: 72A
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: SOT539A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063284112

NXP Semiconductors
9. Package outline
Fig 37. Package outline SOT539A
BLL6H1214-500_2
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
VERSION
OUTLINE
SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
0.375
0.365
9.53
9.27
E 1
Rev. 02 — 1 April 2010
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
3.48
2.97
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
LDMOS L-band radar power transistor
F
p
M
B
0.089
0.079
2.26
2.01
Q
w 1
BLL6H1214-500
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
M
10.29
10.03
0.405
0.395
E 1
U 2
c
© NXP B.V. 2010. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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