PD85025STR-E STMicroelectronics, PD85025STR-E Datasheet

TRANS RF N-CH FET POWERSO-10RF

PD85025STR-E

Manufacturer Part Number
PD85025STR-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD85025STR-E

Transistor Type
LDMOS
Frequency
870MHz
Gain
17.3dB
Voltage - Rated
40V
Current Rating
7A
Current - Test
300mA
Voltage - Test
13.6V
Power - Output
10W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
7A
Drain Source Voltage (max)
40V
Output Power (max)
30W(Typ)
Power Gain (typ)@vds
17.3dB
Frequency (max)
1GHz
Package Type
Power SO-10RF
Pin Count
2
Input Capacitance (typ)@vds
55@12.5VpF
Output Capacitance (typ)@vds
40@12.5VpF
Reverse Capacitance (typ)
1.5@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
66%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
79000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85025STR-E
Manufacturer:
ST
Quantity:
20 000
Table 1.
Features
Description
The PD85025-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85025-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85025-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
August 2008
Excellent thermal stability
Common source configuration
P
13.6 V
Plastic package
ESD protection
In compliance with the 2002/95/EC European
directive
OUT
= 25 W with 15.7 dB gain @ 870 MHz /
PD85025STR-E
PD85025TR-E
Order codes
PD85025S-E
PD85025-E
Device summary
N-channel enhancement-mode lateral MOSFETs
RF power transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Package
Rev 2
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
PD85025S-E
Tape and reel
PD85025-E
Packing
Tube
Source
Drain
www.st.com
1/15
15

Related parts for PD85025STR-E

PD85025STR-E Summary of contents

Page 1

... RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Table 1. Device summary Order codes PD85025-E PD85025S-E PD85025TR-E PD85025STR-E August 2008 RF power transistor, LdmoST plastic family Figure 1. Pin connection Gate Package PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) ...

Page 2

Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

PD85025-E, PD85025S-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source ...

Page 4

Electrical characteristics 2 Electrical characteristics T = +25 CASE 2.1 Static Table 4. Static Symbol DSS GSS GS( ...

Page 5

PD85025-E, PD85025S-E 3 Impedance Figure 2. Current conventions Table 8. Impedance data Frequency (MHz) 870 MHz Z (Ω) IN 0.21 +j 1.82 Impedance Z (Ω) DL 1.23 -j 0.98 5/15 ...

Page 6

Typical performance 4 Typical performance Figure 3. Capacitances vs drain voltage 120 100 Coss Crss Figure 4. DC output characteristics ...

Page 7

PD85025-E, PD85025S-E Figure 6. DC output characteristics Vgs = 4.0V Vgs = 5.0V Vgs = 6.0V Figure 8. Ouptut power and efficiency vs Input ...

Page 8

Typical performance Figure 10. Pout and drain current vs supply voltage 30 Pout Vdd (V) 8/15 Figure 11. Pout and drain current vs supply 2 ...

Page 9

PD85025-E, PD85025S-E 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and ...

Page 10

Package mechanical data Table 9. PowerSO-10RF formed lead (gull wing) mechanical data Dim Note: Resin protrusions not included (max ...

Page 11

PD85025-E, PD85025S-E Table 10. PowerSO-10RF straight lead mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per side) ...

Page 12

Package mechanical data Figure 14. Tube information 12/15 PD85025-E, PD85025S-E ...

Page 13

PD85025-E, PD85025S-E Figure 15. Reel information Package mechanical data 13/15 ...

Page 14

Revision history 6 Revision history Table 11. Document revision history Date 21-May-2007 26-Aug-2008 14/15 Revision 1 Initial release. 2 Updated Table 4 on page 4 PD85025-E, PD85025S-E Changes ...

Page 15

... PD85025-E, PD85025S-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords