PD85035-E STMicroelectronics, PD85035-E Datasheet

TRANS RF POWER LDMOST N-CH

PD85035-E

Manufacturer Part Number
PD85035-E
Description
TRANS RF POWER LDMOST N-CH
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD85035-E

Transistor Type
LDMOS
Frequency
870MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
8A
Current - Test
350mA
Voltage - Test
13.6V
Power - Output
15W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Configuration
Single
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
- 0.5 V to + 15 V
Continuous Drain Current
8 A
Power Dissipation
95 W
Maximum Operating Temperature
+ 165 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
40W(Typ)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO
Pin Count
3
Input Capacitance (typ)@vds
76@12.5VpF
Output Capacitance (typ)@vds
45@12.5VpF
Reverse Capacitance (typ)
1.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
72%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
 Details
Other names
497-8299
497-8299-5
497-8299
PD85035-E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD85035-E
Manufacturer:
ST
0
Part Number:
PD85035-E
Manufacturer:
ST
Quantity:
20 000
Table 1.
Features
Description
The PD85035-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD85035-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD85035-E’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
August 2008
Excellent thermal stability
Common source configuration
P
13.6 V
Plastic package
ESD protection
In compliance with the 2002/95/EC1 European
directive
OUT
= 35 W with 14.9 dB gain @ 870 MHz /
PD85035STR-E
PD85035TR-E
Order codes
PD85035S-E
PD85035-E
Device summary
N-channel enhancement-mode lateral MOSFETs
RF power transistor, LdmoST plastic family
PowerSO-10RF (straight lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (formed lead)
Package
Rev 2
Figure 1.
Gate
Pin connection
PowerSO-10RF
PowerSO-10RF
(straight lead)
(formed lead)
PD85035S-E
Tape and reel
Tape and reel
PD85035-E
Packing
Tube
Tube
Source
Drain
www.st.com
1/15
15

Related parts for PD85035-E

PD85035-E Summary of contents

Page 1

... RF power transistor designed for high gain, broadband commercial and industrial applications. It operates at 13 common source mode at frequencies GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. ...

Page 2

... Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.4 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PD85035-E, PD85035S-E ...

Page 3

... PD85035-E, PD85035S-E 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ °C) C Max. operating junction temperature Storage temperature Parameter ...

Page 4

... MHz DQ = 350 mA 870 MHz DQ OUT = 350 mA P3dB 870 MHz DQ OUT = 350 mA 870 MHz DQ OUT Test conditions Human body model Machine model Test methodology J-STD-020B PD85035-E, PD85035S-E Min Typ Max 1 1 3.9 0.64 0 MHz MHz MHz 1.4 Min Typ Max 35 40 ...

Page 5

... PD85035-E, PD85035S-E 3 Impedance Figure 2. Current conventions Table 8. Impedance data Frequency (MHz) 870 MHz Z (Ω) IN 0.57 +j 0.73 Impedance Z (Ω) DL 1.73 -j 0.15 5/15 ...

Page 6

... Typical performance 4 Typical performance Figure 3. Threshold voltage Figure 6/15 PD85035-E, PD85035S-E Figure 4. DC output characteristic Figure 6. Capacitances vs voltage 160 140 120 100 Vds (V) Ciss Crss Coss ...

Page 7

... PD85035-E, PD85035S-E Figure 7. Pout and Freq = 870 MHz 18 Vdd = 13.6V Pin = 200mW Pout Vgs (V) Figure 9. Gain vs Pout and bias current 22 20 Freq = 870 MHz Vdd = 13. Idq = 150mA Idq = 350mA Pout (W) Figure Figure 10. Gain and efficiency vs Pout Idq = 500mA 11 10 ...

Page 8

... Typical performance Figure 11. Pout and Id vs supply voltage Freq = 870 MHz Pout Vdd (V) 8/15 Figure 12. Pout and Id vs supply voltage Idq = 350mA 2 25 Pin = PD85035-E, PD85035S Freq = 870 MHz Idq = 350mA Pin = 1.2W Pout Vdd ( ...

Page 9

... PD85035-E, PD85035S-E 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... PD85035-E, PD85035S-E Inch Min Typ Max 0. 0.0019 0.0038 0.134 0.137 0.142 0.046 0.05 0.054 0.005 0.007 0.009 0.007 0.212 0.217 0.221 ...

Page 11

... PD85035-E, PD85035S-E Table 10. PowerSO-10RF straight lead mechanical data Dim Note: Resin protrusions not included (max value: 0.15 mm per side) Figure 14. Package dimensions mm. Min Typ Max 1.62 1.67 1.72 3.4 3.5 3.6 1.2 1.3 1.4 0.15 0.2 0.25 0.2 5.4 5.53 5.65 ...

Page 12

... Package mechanical data Figure 15. Tube information 12/15 PD85035-E, PD85035S-E ...

Page 13

... PD85035-E, PD85035S-E Figure 16. Reel information Package mechanical data 13/15 ...

Page 14

... Revision history 6 Revision history Table 11. Document revision history Date 16-May-2007 26-Aug-2008 14/15 Revision 1 Initial release. 2 Updated Table 4 on page 4 PD85035-E, PD85035S-E Changes ...

Page 15

... PD85035-E, PD85035S-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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