MW6S010NR1 Freescale Semiconductor, MW6S010NR1 Datasheet - Page 5

• Manufacturer Part Number: MW6S010NR1
• Description: MOSFET RF N-CH 28V 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MW6S010NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 18dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 125mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 125 mA
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 20dB
• Frequency (max): 1.5GHz
• Package Type: TO-270
• Pin Count: 3
• Output Capacitance (typ)@vds: 10@28VpF
• Reverse Capacitance (typ): 0.32@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 33%
• Mounting: Surface Mount
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 61400mW
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 68V
• Rf Transistor Case: TO-270
• Msl: MSL 3 - 168 Hours
• Filter Terminals: SMD
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Operating Frequency Max: 900MHz
• Gate-source Voltage: 12V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MW6S010NR1; MW6S010NR1TR

RF Device Data
Freescale Semiconductor
−15
−20
−25
−30
−35
−40
−45
−50
−55
20
19
18
17
16
15
0.1
0.1
V
Two−Tone Measurements
100 kHz Tone Spacing
Figure 6. Intermodulation Distortion Products
DD
V
I
(f1+f2)/2 = Center Frequency = 945 MHz
DQ
DD
= 28 Vdc, f = 945 MHz
Figure 4. Two - Tone Power Gain versus
90 mA
= 125 mA, Two−Tone Measurements
I
= 28 Vdc, P
DQ
= 190 mA
125 mA
P
out
, OUTPUT POWER (WATTS) AVG.
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
5th Order
1
= 10 W (Avg.)
1
Output Power
3rd Order
7th Order
48
44
40
36
32
28
24
20
16
910
V
I
DQ
TYPICAL CHARACTERISTICS
DD
Figure 3. Two - Tone Wideband Performance
10
10
= 125 mA, 100 kHz Tone Spacing
= 28 Vdc, P
920
out
930
= 10 W (Avg.)
IMD
@ P
f, FREQUENCY (MHz)
100
η
100
out
D
IRL
940
= 10 Watts
G
ps
−10
−20
−30
−40
−50
−60
−70
950
48
46
44
42
40
38
0.1
19
V
f = 945 MHz, Two−Tone Measurements
100 kHz Tone Spacing
P1dB = 42.23 dBm (16.71 W)
— 900 MHz
DD
Figure 5. Intermodulation Distortion Products
Figure 7. Pulse CW Output Power versus
= 28 Vdc, I
960
P3dB = 43.14 dBm (20.61 W)
21
P
DQ
out
970
= 125 mA
, OUTPUT POWER (WATTS) AVG.
versus Output Power
P
−8
−10
−12
−14
−16
−18
−20
−22
−24
−26
in
1
, INPUT POWER (dBm)
23
Input Power
MW6S010NR1 MW6S010GNR1
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 945 MHz
DD
= 28 Vdc, I
25
DQ
10
= 125 mA
27
5th Order
3rd Order
7th Order
Ideal
Actual
29
100
5