MRF6V2010NR1 Freescale Semiconductor, MRF6V2010NR1 Datasheet - Page 11

• Manufacturer Part Number: MRF6V2010NR1
• Description: IC MOSFET RF N-CHAN TO270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2010NR1

• Transistor Type: N-Channel
• Frequency: 220MHz
• Gain: 23.9dB
• Voltage - Rated: 110V
• Current Rating: 2.5mA
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 10W
• Package / Case: TO-270-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 10W
• Power Gain (typ)@vds: 23.9dB
• Frequency (min): 10MHz
• Frequency (max): 450MHz
• Package Type: TO-270
• Pin Count: 3
• Input Capacitance (typ)@vds: 16.3@50VpF
• Output Capacitance (typ)@vds: 7.3@50VpF
• Reverse Capacitance (typ): 0.13@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 62%
• Mounting: Surface Mount
• Mode Of Operation: CW
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Drain Source Voltage Vds: 110V
• Power Dissipation Pd: 10W
• Operating Temperature Range: -65°C To +150°C
• Rf Transistor Case: TO-272
• No. Of Pins: 3
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
f = 450 MHz Z
source
Figure 18. Series Equivalent Source and Load Impedance
f = 220 MHz Z
f = 130 MHz Z
Input
Matching
Network
Z
Z
source
load
MHz
130
220
450
f = 64 MHz Z
64
f
source
= Test circuit impedance as measured from
= Test circuit impedance as measured
source
V
DD
gate to ground.
from drain to ground.
Z
= 50 Vdc, I
source
source
37.5 + j15.1
26.7 + j21.3
20.0 + j25.4
7.70 + j21.0
Z
Device
Under
Test
source
DQ
Ω
Z
o
= 30 mA, P
= 50 Ω
Z
load
out
= 10 W CW
94.5 + j16.7
83.8 + j35.0
75.0 + j44.0
43.0 + j49.0
Z
f = 450 MHz Z
Output
Matching
Network
load
Ω
f = 220 MHz Z
f = 130 MHz Z
load
MRF6V2010NR1 MRF6V2010NBR1
f = 64 MHz Z
load
load
load
11