MRF6V2010GNR1 Freescale Semiconductor, MRF6V2010GNR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6V2010GNR1
• Description: MOSFET RF N-CH 10W TO-270-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V2010GNR1

• Transistor Type: N-Channel
• Power - Output: 10W
• Package / Case: TO-270-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -

2
MRF6V2010NR1 MRF6V2010NBR1
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD 22--A113, IPC/JEDEC J--STD--020
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
(V
(I
(V
(V
(V
(V
(V
(V
(V
(V
D
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 mA, V
= 5 Vdc, V
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
= 0 Vdc)
GS
GS
= 28 μAdc)
= 30 mAdc, Measured in Functional Test)
= 70 mAdc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
= 30 mA, P
IRL
GSS
DSS
DSS
η
3
oss
rss
iss
ps
D
out
22.5
Min
110
Package Peak Temperature
1.5
58
—
—
—
—
—
—
—
—
1
= 10 W, f = 220 MHz, CW
1.68
2.68
0.26
0.13
16.3
23.9
260
Typ
--14
7.3
62
—
—
—
—
IV (Minimum)
A (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
25.5
2.5
3.5
10
50
—
—
—
—
—
—
--9
3
RF Device Data
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
mA
dB
dB
°C
pF
pF
pF
%