MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 2

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF6S20010NR1 MRF6S20010GNR1
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
f2 = 2170.1 MHz, Two - Tone Test
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Part internally matched on input.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
Case Temperature 78°C, 1 W CW
Case Temperature 79°C, 10 W PEP, Two - Tone Test
(V
(V
(V
(V
(V
(V
(V
(V
(V
MTTF calculators by product.
DS
DS
GS
DS
DD
GS
DS
DS
DS
Select Documentation/Application Notes - AN1955.
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
(4)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
GS
= 40 μAdc)
= 130 mAdc, Measured in Functional Test)
= 0.4 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(3)
Test Methodology
Characteristic
Test Methodology
Characteristic
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
V
Rating
V
V
I
I
I
C
DQ
DS(on)
C
IMD
GS(th)
GS(Q)
C
G
IRL
DSS
DSS
GSS
η
3
oss
rss
iss
ps
D
= 130 mA, P
Symbol
R
θJC
Min
Package Peak Temperature
1.5
14
33
—
—
—
—
—
—
—
—
—
2
out
= 10 W PEP, f1 = 2170 MHz,
1A (Minimum)
IV (Minimum)
A (Minimum)
0.33
11.6
15.5
260
Typ
120
- 34
- 15
2.2
2.8
20
36
—
—
—
Value
Class
2.5
5.9
Freescale Semiconductor
(1,2)
Max
500
3.5
0.4
- 28
10
17
—
—
—
—
- 9
1
4
RF Device Data
(continued)
°C/W
Unit
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
pF
%