MRFE6S9046NR1 Freescale Semiconductor, MRFE6S9046NR1 Datasheet - Page 8

• Manufacturer Part Number: MRFE6S9046NR1
• Description: MOSFET RF N-CH 45W TO-270-4
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9046NR1

• Transistor Type: N-Channel
• Frequency: 960MHz
• Gain: 19dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 300mA
• Voltage - Test: 28V
• Power - Output: 35.5W
• Package / Case: TO-270-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 66V
• Output Power (max): 17.8W
• Power Gain (typ)@vds: 19dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: TO-270 WB GULL
• Pin Count: 5
• Input Capacitance (typ)@vds: 120@28VpF
• Output Capacitance (typ)@vds: 318@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 57%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/GSM/GSM EDGE
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRFE6S9046NR1 MRFE6S9046GNR1
8
20
15
10
−5
5
0
650
Figure 14. Broadband Frequency Response
V
P
I
750
DQ
DD
out
= 300 mA
= 28 Vdc
= 9 dBm
850
Gain
f, FREQUENCY (MHz)
950
IRL
1050
−100
−110
−10
−20
−30
−40
−50
−60
−70
−80
−90
Center 1.96 GHz
1150
600 kHz
Reference Power
400 kHz
1250
TYPICAL CHARACTERISTICS
Figure 16. EDGE Spectrum
1350
GSM TEST SIGNAL
1450
0
−6
−12
−18
−24
−30
200 kHz
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
10
10
10
10
10
10
9
8
7
6
5
4
90
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
400 kHz
110
Span 2 MHz
600 kHz
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
150
out
170
= 35.5 W CW, and η
Freescale Semiconductor
190
RF Device Data
210
D
= 57%.
230
250