MRF1550NT1 Freescale Semiconductor, MRF1550NT1 Datasheet

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MRF1550NT1

Manufacturer Part Number
MRF1550NT1
Description
IC MOSFET RF N-CHAN TO272-6 WRAP
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1550NT1

Transistor Type
N-Channel
Frequency
175MHz
Gain
14.5dB
Voltage - Rated
40V
Current Rating
12A
Current - Test
500mA
Voltage - Test
12.5V
Power - Output
50W
Package / Case
TO-272-6 wrap
Drain Source Voltage Vds
40V
Continuous Drain Current Id
12A
Power Dissipation Pd
165W
Operating Frequency Range
135MHz To 175MHz
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
12A
Drain Source Voltage (max)
40V
Output Power (max)
50W
Power Gain (typ)@vds
14.5dB
Frequency (max)
175MHz
Package Type
TO-272 WARP EP
Pin Count
6
Input Capacitance (typ)@vds
500@12.5VpF
Output Capacitance (typ)@vds
250(Max)@12.5VpF
Reverse Capacitance (typ)
35(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Screw
Number Of Elements
1
Power Dissipation (max)
165000mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF1550NT1
Manufacturer:
FREESCALE
Quantity:
110
Part Number:
MRF1550NT1
Manufacturer:
Freescale Semiconductor
Quantity:
135
Part Number:
MRF1550NT1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
Derate above 25°C
calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 50 Watts
Power Gain — 14.5 dB
Efficiency — 55%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
Rating
3
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
CASE 1264 - 10, STYLE 1
CASE 1264A - 03, STYLE 1
Document Number: MRF1550N
TO - 272 - 6 WRAP
MRF1550FNT1
LATERAL N - CHANNEL
MRF1550NT1
260
MRF1550NT1
MRF1550FNT1
175 MHz, 50 W, 12.5 V
RF POWER MOSFETs
PLASTIC
TO - 272 - 6
PLASTIC
MRF1550NT1 MRF1550FNT1
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
0.50
0.75
± 20
165
200
12
(2)
Rev. 15, 6/2009
W/°C
Unit
°C/W
Unit
Vdc
Vdc
Adc
Unit
°C
°C
°C
W
1

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MRF1550NT1 Summary of contents

Page 1

... PLASTIC MRF1550NT1 CASE 1264A - 03, STYLE 272 - 6 PLASTIC MRF1550FNT1 Symbol Value V - 0.5, +40 DSS V ± 165 D 0. +150 stg T 200 J (2) Symbol Value R 0.75 θJC Package Peak Temperature 260 MRF1550NT1 MRF1550FNT1 Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W Unit °C 1 ...

Page 2

... MHz Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ MRF1550NT1 MRF1550FNT1 2 = 25°C unless otherwise noted) Symbol I DSS I GSS V GS(th) R DS(on) V DS(on oss C rss 175 MHz η ...

Page 3

... Microstrip 0.270″ x 0.080″ Microstrip 0.730″ x 0.080″ Microstrip ® Glass Teflon , 31 mils V = 12.5 Vdc DD 175 MHz 135 MHz 155 MHz OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1550NT1 MRF1550FNT1 RF OUTPUT 80 3 ...

Page 4

... I , BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 135 MHz 60 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1550NT1 MRF1550FNT1 4 TYPICAL CHARACTERISTICS 80 70 135 MHz 12.5 Vdc Figure 5. Drain Efficiency versus Output Power 12.5 Vdc ...

Page 5

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1550NT1 MRF1550FNT1 5 ...

Page 6

... Figure 11. Series Equivalent Input and Output Impedance MRF1550NT1 MRF1550FNT1 Ω 175 MHz f = 175 MHz 135 MHz f = 135 MHz 500 mA out MHz Ω Ω 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j0.9 175 3.7 + j2.3 0 Complex conjugate of source in impedance ...

Page 7

... ∠ φ ∠ φ 116 0.94 - 179 42 0.94 - 178 13 0.94 - 177 43 0.95 - 176 65 0.95 - 175 68 0.95 - 175 74 0.97 - 174 (continued) MRF1550NT1 MRF1550FNT1 7 ...

Page 8

... Table 5. Common Source Scattering Parameters ( ∠ φ MHz 11 400 0.97 - 179 450 0.98 - 178 500 0.98 - 178 550 0.98 - 178 600 0.98 - 178 MRF1550NT1 MRF1550FNT1 8 = 12.5 Vdc) (continued 4.0 mA (continued ∠ φ 0.49 63 0.005 0.41 63 0.005 0.36 62 0.003 0.32 58 0.004 0. ...

Page 9

... DS(on) ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. has a positive temperature DS(on) DSS can result in permanent GS ), whose value is application dependent 500 mA, which is the DQ DQ MRF1550NT1 MRF1550FNT1 is not 9 Ω may 9 ...

Page 10

... This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt MRF1550NT1 MRF1550FNT1 10 resistive loading, or output to input feedback. The RF test fix- ture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher effi- ciency, lower gain, and more stable operating region ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF1550NT1 MRF1550FNT1 11 ...

Page 12

... MRF1550NT1 MRF1550FNT1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF1550NT1 MRF1550FNT1 13 ...

Page 14

... MRF1550NT1 MRF1550FNT1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF1550NT1 MRF1550FNT1 15 ...

Page 16

... MRF1550NT1 MRF1550FNT1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Product Documentation, Application Notes • Added Electromigration MTTF Calculator availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description value from 150 to 500 to match Functional Test I DQ value and replotted data, Fig. 11, Series Equivalent Input and Output Impedance, OL specification MRF1550NT1 MRF1550FNT1 17 ...

Page 18

... RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1550NT1 MRF1550FNT1 Document Number: MRF1550N Rev. 15, 6/2009 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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