MRF1570NT1 Freescale Semiconductor, MRF1570NT1 Datasheet - Page 15

• Manufacturer Part Number: MRF1570NT1
• Description: IC MOSFET RF N-CHAN TO272-8 WRAP
• Manufacturer: Freescale Semiconductor

Specifications of MRF1570NT1

• Transistor Type: N-Channel
• Frequency: 470MHz
• Gain: 11.5dB
• Voltage - Rated: 40V
• Current Rating: 1µA
• Current - Test: 800mA
• Voltage - Test: 12.5V
• Power - Output: 70W
• Package / Case: TO-272-6 wrap
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
AMPLIFIER DESIGN
bipolar transistors are suitable for this device. For examples
see Freescale Application Note AN721, “Impedance
Matching Networks Applied to RF Power Transistors.”
Large - signal impedances are provided, and will yield a good
first pass approximation.
unilateral. This coupled with the very high gain of this device
yields a device capable of self oscillation. Stability may be
Impedance matching networks similar to those used with
Since RF power MOSFETs are triode devices, they are not
achieved by techniques such as drain loading, input shunt
resistive loading, or output to input feedback. The RF test fix-
ture implements a parallel resistor and capacitor in series
with the gate, and has a load line selected for a higher effi-
ciency, lower gain, and more stable operating region. See
Freescale Application Note AN215A, “RF Small - Signal
Design Using Two - Port Parameters” for a discussion of two
port network theory and stability.
MRF1570NT1 MRF1570FNT1
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